PartNumber | NE350184C | NE350184C-T1 | NE350184C-T1-A |
Description | RF JFET Transistors Low Noise HJ FET | RF JFET Transistors Low Noise HJ FET | |
Manufacturer | CEL | - | - |
Product Category | RF JFET Transistors | - | - |
RoHS | Y | - | - |
Transistor Type | HFET | - | - |
Technology | GaAs | - | - |
Gain | 13.5 dB | - | - |
Transistor Polarity | N-Channel | - | - |
Vds Drain Source Breakdown Voltage | 4 V | - | - |
Vgs Gate Source Breakdown Voltage | - 3 V | - | - |
Id Continuous Drain Current | 70 mA | - | - |
Maximum Operating Temperature | + 150 C | - | - |
Pd Power Dissipation | 165 mW | - | - |
Mounting Style | SMD/SMT | - | - |
Package / Case | Micro-X | - | - |
Packaging | Bulk | - | - |
Operating Frequency | 20 GHz | - | - |
Product | RF JFET | - | - |
Type | GaAs HFET | - | - |
Brand | CEL | - | - |
Forward Transconductance Min | 40 mS | - | - |
Gate Source Cutoff Voltage | - 2 V | - | - |
NF Noise Figure | 0.7 dB | - | - |
Product Type | RF JFET Transistors | - | - |
Factory Pack Quantity | 30 | - | - |
Subcategory | Transistors | - | - |