NE350184C

NE350184C
Mfr. #:
NE350184C
Hersteller:
CEL
Beschreibung:
RF JFET Transistors Low Noise HJ FET
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
NE350184C Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
NE350184C DatasheetNE350184C Datasheet (P4-P6)NE350184C Datasheet (P7-P8)
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
CEL
Produktkategorie:
HF-JFET-Transistoren
RoHS:
Y
Transistortyp:
HFET
Technologie:
GaAs
Gewinnen:
13.5 dB
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
4 V
Vgs - Gate-Source-Durchbruchspannung:
- 3 V
Id - Kontinuierlicher Drainstrom:
70 mA
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
165 mW
Montageart:
SMD/SMT
Paket / Koffer:
Mikro-X
Verpackung:
Schüttgut
Arbeitsfrequenz:
20 GHz
Produkt:
HF-JFET
Typ:
GaAs HFET
Marke:
CEL
Vorwärtstranskonduktanz - Min:
40 mS
Gate-Source-Abschaltspannung:
- 2 V
NF - Rauschzahl:
0.7 dB
Produktart:
HF-JFET-Transistoren
Werkspackungsmenge:
30
Unterkategorie:
Transistoren
Tags
NE3501, NE350, NE35, NE3
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***i-Key
HJ-FET 20GHZ MICRO-X
Teil # Mfg. Beschreibung Aktie Preis
NE350184C
DISTI # NE350184C-ND
California Eastern Laboratories (CEL)FET RF 4V 20GHZ MICRO-X
RoHS: Compliant
Min Qty: 30
Container: Bulk
Limited Supply - Call
    NE350184C
    DISTI # 551-NE350184C
    California Eastern Laboratories (CEL)RF JFET Transistors Low Noise HJ FET
    RoHS: Compliant
    0
      NE350184C-T1A
      DISTI # 551-NE350184C-T1-A
      California Eastern Laboratories (CEL)RF JFET Transistors Low Noise HJ FET
      RoHS: Compliant
      0
        NE350184C-T1
        DISTI # 551-NE350184C-T1
        California Eastern Laboratories (CEL)RF JFET Transistors Low Noise HJ FET
        RoHS: Compliant
        0
          NE350184C-A
          DISTI # 551-NE350184C-A
          NEC Electronics GroupRF JFET Transistors Low Noise HJ FET
          RoHS: Compliant
          0
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            Verfügbarkeit
            Aktie:
            Available
            Auf Bestellung:
            3000
            Menge eingeben:
            Der aktuelle Preis von NE350184C dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
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