NE3510M04

NE3510M04-A vs NE3510M04-T2-A vs NE3510M04

 
PartNumberNE3510M04-ANE3510M04-T2-ANE3510M04
DescriptionRF JFET Transistors L-S Band Lo No AmpRF JFET Transistors L-S Band Lo No Amp
ManufacturerCELCELCEL
Product CategoryRF JFET TransistorsTransistors - FETs, MOSFETs - SingleTransistors - FETs, MOSFETs - Single
RoHSY--
Transistor TypeHFETHFETHFET
TechnologyGaAsGaAsGaAs
Gain16 dB16 dB16 dB
Transistor PolarityN-ChannelN-ChannelN-Channel
Vds Drain Source Breakdown Voltage4 V--
Vgs Gate Source Breakdown Voltage- 3 V--
Id Continuous Drain Current97 mA--
Maximum Operating Temperature+ 150 C+ 150 C+ 150 C
Pd Power Dissipation125 mW--
Mounting StyleSMD/SMTSMD/SMTSMD/SMT
Package / CaseFTSMM-4 (M04)--
Operating Frequency4 GHz4 GHz4 GHz
ProductRF JFET--
TypeGaAs HFET--
BrandCEL--
Forward Transconductance Min70 mS--
Gate Source Cutoff Voltage- 0.7 V-- 0.7 V
NF Noise Figure0.45 dB--
P1dB Compression Point11 dBm--
Product TypeRF JFET Transistors--
Factory Pack Quantity1--
SubcategoryTransistors--
Packaging-Reel-
Package Case-FTSMM-4 (M04)FTSMM-4 (M04)
Pd Power Dissipation-125 mW125 mW
Id Continuous Drain Current-97 mA97 mA
Vds Drain Source Breakdown Voltage-4 V4 V
Forward Transconductance Min-70 mS70 mS
Vgs Gate Source Breakdown Voltage-- 3 V- 3 V
NF Noise Figure-0.45 dB0.45 dB
P1dB Compression Point-11 dBm11 dBm
Hersteller Teil # Beschreibung RFQ
CEL
CEL
NE3510M04-A RF JFET Transistors L-S Band Lo No Amp
NE3510M04-A RF JFET Transistors L-S Band Lo No Amp
NE3510M04-T2-A RF JFET Transistors L-S Band Lo No Amp
NE3510M04 Neu und Original
NE3510M04-07-T2 Neu und Original
NE3510M04-T1-A Neu und Original
NE3510M04-T2 Neu und Original
NE3510M04T2 Neu und Original
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