NE685M

NE685M33-A vs NE685M03-T1 vs NE685M33-T3

 
PartNumberNE685M33-ANE685M03-T1NE685M33-T3
DescriptionRF Bipolar Transistors NPN Silicon Amp Oscillatr Transistor
ManufacturerCEL--
Product CategoryRF Bipolar Transistors--
RoHSY--
Transistor TypeBipolar--
TechnologySi--
Transistor PolarityNPN--
Emitter Base Voltage VEBO2 V--
Continuous Collector Current0.03 A--
Minimum Operating Temperature- 65 C--
Maximum Operating Temperature+ 150 C--
ConfigurationSingle--
Collector Base Voltage VCBO9 V--
DC Current Gain hFE Max75 at 10 mA at 3 V--
Operating Frequency12000 MHz (Typ)--
TypeRF Bipolar Small Signal--
BrandCEL--
Pd Power Dissipation130 mW--
Product TypeRF Bipolar Transistors--
Factory Pack Quantity1--
SubcategoryTransistors--
Hersteller Teil # Beschreibung RFQ
CEL
CEL
NE685M33-A RF Bipolar Transistors NPN Silicon Amp Oscillatr Transistor
NE685M33-T3-A RF Bipolar Transistors NPN Silicon Amp Oscillatr Transistor
NE685M03-T1 Neu und Original
NE685M33-T3 Neu und Original
NE685M13-T1-A Neu und Original
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