PartNumber | NESG2021M05-EVNF58 | NESG2030M04-T2-A | NESG2030M04-A |
Description | RF Bipolar Transistors For NESG2021M05-A Noise Fig at 5.8 GHz | RF Bipolar Transistors NPN SiGe High Freq | RF SMALL SIGNAL TRANSISTOR BIPOLAR/HBT |
Manufacturer | CEL | CEL | - |
Product Category | RF Bipolar Transistors | RF Bipolar Transistors | - |
RoHS | N | Y | - |
Transistor Type | Bipolar | Bipolar | - |
Technology | SiGe | SiGe | - |
Transistor Polarity | NPN | NPN | - |
Emitter Base Voltage VEBO | 1.5 V | 1.2 V | - |
Continuous Collector Current | 35 mA | 0.035 A | - |
Maximum Operating Temperature | + 150 C | + 150 C | - |
Mounting Style | SMD/SMT | SMD/SMT | - |
Package / Case | SOT-343 | SOT-343 | - |
Type | RF Silicon Germanium | RF Silicon Germanium | - |
Brand | CEL | CEL | - |
Pd Power Dissipation | 175 mW | 80 mW | - |
Product Type | RF Bipolar Transistors | RF Bipolar Transistors | - |
Factory Pack Quantity | 1 | 3000 | - |
Subcategory | Transistors | Transistors | - |
Minimum Operating Temperature | - | - 65 C | - |
Configuration | - | Single | - |
Packaging | - | Reel | - |
Collector Base Voltage VCBO | - | 8 V | - |
DC Current Gain hFE Max | - | 200 at 5 mA at 2 V | - |
Operating Frequency | - | 60000 MHz | - |