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NESG2021M16-T3-A

NESG2021M16-T3-A
Mfr. #:
NESG2021M16-T3-A
Hersteller:
Rochester Electronics, LLC
Beschreibung:
- Bulk (Alt: NESG2021M16-T3-A)
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
NESG2021M16-T3-A Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Tags
NESG202, NESG20, NESG2, NESG, NES
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ponent Stockers USA
C BAND SiGe NPN RF SMALL SIGNAL TRANSISTOR
*** Services
CoC and 2-years warranty / RFQ for pricing
***i-Key
TRANS NPN 2GHZ M16
***ineon SCT
NPN Silicon RF Transistor for ESD protected high gain low noise amplifier, TSFP-4-1, RoHS
***roFlash
RF Small Signal Bipolar Transistor, 0.08A I(C), 1-Element, S Band, Silicon, NPN
*** Electronic Components
Trans GP BJT NPN 4.5V 0.08A 4-Pin TSFP T/R (Alt: BFP 540FESD H6327)
***nell
RF TRANSISTOR, NPN, 4.5V, 30GHZ, TSFP; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 4.5V; Transition Frequency ft: 30GHz; Power Dissipation Pd: 250mW; DC Collector Current: 80mA; DC Current Gain hFE: 50hFE; RF Transistor Case: TSFP; No. of Pins: 4Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
***ineon
NPN Silicon RF Transistor for ESD protected high gain low noise amplifier | Summary of Features: Excellent ESD performance typical value 1000 V (HBM) Outstanding Gms = 20 dB Noise Figure F = 0.9 dB; SIEGET 45 - Line; Pb-free (ROHS compliant) package; Qualification report according to AEC-Q101 available; * Short term description | Target Applications: Wireless Communications; For amplifier and oscillator applications in RF Front-end
***ure Electronics
BFP420F Series 5.5 V 60 mA Low Noise Silicon Bipolar RF Transistor - TSFP-4-1
***ow.cn
Trans RF BJT NPN 4.5V 0.06A 210mW Automotive 4-Pin TSFP T/R
***nell
RF TRANSISTOR, NPN, 4.5V, 25GHZ, TSFP; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 4.5V; Transition Frequency ft: 25GHz; Power Dissipation Pd: 210mW; DC Collector Current: 60mA; DC Current Gain hFE: 60hFE; RF Transistor Case: TSFP; No. of Pins: 4Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
***ineon
Low Noise Silicon Bipolar RF Transistor | Summary of Features: Low noise high gain silicon bipolar RF transistor; Based on Infineons reliable very high volume 25 GHz silicon bipolar technology; 0.9 dB minimum noise figure typical at 900 MHz, 3 V, 4 mA; 16 dB maximum gain (Gma) typical at 2.4 GHz, 3 V, 15 mA; 28 dBm OIP3 typical at 2.4 GHz, 4 V, 40 mA; 16.5 dBm OP1dB typical at 2.4 GHz, 4 V, 40 mA; Popular in discrete oscillators; Thin, small, flat, Pb-free (RoHS compliant) and Hal-free; (green) package with visible leads | Target Applications: As Low Noise Amplifier (LNA) in; Satellite communication systems: Navigation systems (GPS, Glonass), satellite radio (SDARs, DAB); Multimedia applications such as mobile/portable TV, CATV, FM Radio; ISM applications like RKE, AMR and Zigbee; As discrete active mixer in RF Frontends; As active device in discretes oscillators
***i-Key
TRANS NPN 3.5V 35MA 3SSFP
***nell
TRANS, NPN, 3.5V, 0.035A, SSFP; Transistor Polarity:NPN; Collector-to-Emitter Breakdown Voltage:3.5V; Typ Gain Bandwidth ft:21GHz; Power Dissipation Pd:120mW; DC Collector Current:35mA; DC Current Gain hFE:160; Transistor Case Style:SC-81; No. of Pins:3
***ure Electronics
BFP740F: 4.7 V 30 mA Low Noise Silicon Germanium Bipolar RF Transistor - TSFP-4
***ow.cn
Trans RF BJT NPN 4V 0.045A 160mW Automotive 4-Pin TSFP T/R
***nell
RF BIP TRANSISTORS; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 4V; Transition Frequency ft: 45GHz; Power Dissipation Pd: 160mW; DC Collector Current: 45mA; DC Current Gain hFE: 250hFE; RF Transistor Case: TSFP; No. of Pins: 4Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: AEC-Q101; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
***ineon
Summary of Features: High gain ultra low noise RF transistor; Provides outstanding performance for a wide range of wireless applications up to 10 GHz and more; Ideal for CDMA and WLAN applications; Outstanding noise figure F = 0.5 dB at 1.8 GHz, Outstanding noise figure F = 0.75 dB at 6 GHz; High maximum stable gain :Gms = 27.5 dB at 1.8 GHz; Gold metallization for extra high reliability; 150 GHz fT-Silicon Germanium technology; Pb-free (RoHS compliant) package1); Qualified according AEC Q101
***p One Stop Global
Trans RF BJT NPN 6V 0.05A 200mW 3-Pin SMT T/R
***S.I.T. Europe - USA - Asia
RF Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN
***i-Key
RF TRANS NPN 6V 800MHZ SMT3
Teil # Mfg. Beschreibung Aktie Preis
NESG2021M16-T3-A
DISTI # NESG2021M16-T3-A		Renesas Electronics Corporation- Bulk (Alt: NESG2021M16-T3-A)
Min Qty: 863
Container: Bulk		Americas - 0
  • 8630:$0.3619
  • 4315:$0.3849
  • 2589:$0.3999
  • 1726:$0.4159
  • 863:$0.4319
NESG2021M16-T3-A
DISTI # 551-NESG2021M16-T3-A		California Eastern Laboratories (CEL)RF Bipolar Transistors NPN High Frequency
RoHS: Compliant		0
    NESG2021M16-T3-ARenesas Electronics CorporationRF Small Signal Bipolar Transistor, 0.035A I(C), 1-Element, C Band, Silicon Germanium, NPN
    RoHS: Compliant    		20000
    • 1000:$0.3800
    • 500:$0.4000
    • 100:$0.4200
    • 25:$0.4400
    • 1:$0.4700
    Bild Teil # Beschreibung
    NESG2021M05-EVNF58

    Mfr.#: NESG2021M05-EVNF58

    OMO.#: OMO-NESG2021M05-EVNF58

    		 RF Bipolar Transistors For NESG2021M05-A Noise Fig at 5.8 GHz
    NESG2021M05-EVNF58

    Mfr.#: NESG2021M05-EVNF58

    OMO.#: OMO-NESG2021M05-EVNF58-CEL

    		 RF Bipolar Transistors For NESG2021M05-A Noise Fig at 5.8 GHz
    NESG2021M16-A

    Mfr.#: NESG2021M16-A

    OMO.#: OMO-NESG2021M16-A-317

    		 RF Bipolar Transistors NPN High Frequency
    NESG2021M05

    Mfr.#: NESG2021M05

    OMO.#: OMO-NESG2021M05-1152

    		 RF Bipolar Transistors
    NESG2021M05-T1

    Mfr.#: NESG2021M05-T1

    OMO.#: OMO-NESG2021M05-T1-1190

    		 Neu und Original
    NESG2021M05-T1-A

    Mfr.#: NESG2021M05-T1-A

    OMO.#: OMO-NESG2021M05-T1-A-1190

    		 Neu und Original
    NESG2021M05-T1-A , EM632

    Mfr.#: NESG2021M05-T1-A , EM632

    OMO.#: OMO-NESG2021M05-T1-A-EM632-1190

    		 Neu und Original
    NESG2021M16-T3-A

    Mfr.#: NESG2021M16-T3-A

    OMO.#: OMO-NESG2021M16-T3-A-1190

    		 - Bulk (Alt: NESG2021M16-T3-A)
    Verfügbarkeit
    Aktie:
    Available
    Auf Bestellung:
    4500
    Menge eingeben:
    Der aktuelle Preis von NESG2021M16-T3-A dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
    Referenzpreis (USD)
    Menge
    Stückpreis
    ext. Preis
    1
    0,54 $
    0,54 $
    10
    0,52 $
    5,16 $
    100
    0,49 $
    48,86 $
    500
    0,46 $
    230,70 $
    1000
    0,43 $
    434,30 $
    Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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