 |  | | |
| PartNumber | NESG2021M05-EVNF58 | NESG2021M16-A | NESG2021M05 |
| Description | RF Bipolar Transistors For NESG2021M05-A Noise Fig at 5.8 GHz | RF Bipolar Transistors NPN High Frequency | RF Bipolar Transistors |
| Manufacturer | CEL | CEL | NEC |
| Product Category | RF Bipolar Transistors | RF Transistors (BJT) | RF Evaluation and Development Kits, Boards |
| RoHS | N | - | - |
| Transistor Type | Bipolar | Bipolar | - |
| Technology | SiGe | SiGe | - |
| Transistor Polarity | NPN | - | - |
| Emitter Base Voltage VEBO | 1.5 V | - | - |
| Continuous Collector Current | 35 mA | 35 mA | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | SOT-343 | - | - |
| Type | RF Silicon Germanium | - | - |
| Brand | CEL | - | - |
| Pd Power Dissipation | 175 mW | - | - |
| Product Type | RF Bipolar Transistors | - | - |
| Factory Pack Quantity | 1 | - | - |
| Subcategory | Transistors | - | - |
| Packaging | - | Reel | - |
| Package Case | - | SOT-343 | - |
| Pd Power Dissipation | - | 175 mW | - |
| Emitter Base Voltage VEBO | - | 1.5 V | - |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
CEL |
NESG2021M05-EVNF58 | RF Bipolar Transistors For NESG2021M05-A Noise Fig at 5.8 GHz | |
| NESG2021M05-EVNF58 | RF Bipolar Transistors For NESG2021M05-A Noise Fig at 5.8 GHz | ||
| NESG2021M16-A | RF Bipolar Transistors NPN High Frequency | ||
| NESG2021M05 | RF Bipolar Transistors | ||
| NESG2021M05-T1 | Neu und Original | ||
| NESG2021M05-T1-A | Neu und Original | ||
| NESG2021M05-T1-A , EM632 | Neu und Original | ||
| NESG2021M16-T3-A | - Bulk (Alt: NESG2021M16-T3-A) |