 |  | | |
| PartNumber | NESG2021M05-EVNF58 | NESG2021M05 | NESG2021M05-T1 |
| Description | RF Bipolar Transistors For NESG2021M05-A Noise Fig at 5.8 GHz | RF Bipolar Transistors | |
| Manufacturer | CEL | NEC | - |
| Product Category | RF Bipolar Transistors | RF Evaluation and Development Kits, Boards | - |
| RoHS | N | - | - |
| Transistor Type | Bipolar | - | - |
| Technology | SiGe | - | - |
| Transistor Polarity | NPN | - | - |
| Emitter Base Voltage VEBO | 1.5 V | - | - |
| Continuous Collector Current | 35 mA | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | SOT-343 | - | - |
| Type | RF Silicon Germanium | - | - |
| Brand | CEL | - | - |
| Pd Power Dissipation | 175 mW | - | - |
| Product Type | RF Bipolar Transistors | - | - |
| Factory Pack Quantity | 1 | - | - |
| Subcategory | Transistors | - | - |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
CEL |
NESG2021M05-EVNF58 | RF Bipolar Transistors For NESG2021M05-A Noise Fig at 5.8 GHz | |
| NESG2021M05-EVNF58 | RF Bipolar Transistors For NESG2021M05-A Noise Fig at 5.8 GHz | ||
| NESG2021M05 | RF Bipolar Transistors | ||
| NESG2021M05-T1 | Neu und Original | ||
| NESG2021M05-T1-A | Neu und Original | ||
| NESG2021M05-T1-A , EM632 | Neu und Original |