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| PartNumber | NESG2030M04-T2-A | NESG2030M04-A | NESG2031M05-EVNF58 |
| Description | RF Bipolar Transistors NPN SiGe High Freq | RF SMALL SIGNAL TRANSISTOR BIPOLAR/HBT | RF Bipolar Transistors For NESF2031M05-A Noise Fig at 5.8 GHz |
| Manufacturer | CEL | - | CEL |
| Product Category | RF Bipolar Transistors | - | RF Evaluation and Development Kits, Boards |
| RoHS | Y | - | - |
| Transistor Type | Bipolar | - | - |
| Technology | SiGe | - | - |
| Transistor Polarity | NPN | - | - |
| Emitter Base Voltage VEBO | 1.2 V | - | - |
| Continuous Collector Current | 0.035 A | - | - |
| Minimum Operating Temperature | - 65 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Configuration | Single | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | SOT-343 | - | - |
| Packaging | Reel | - | - |
| Collector Base Voltage VCBO | 8 V | - | - |
| DC Current Gain hFE Max | 200 at 5 mA at 2 V | - | - |
| Operating Frequency | 60000 MHz | - | - |
| Type | RF Silicon Germanium | - | Transistor |
| Brand | CEL | - | - |
| Pd Power Dissipation | 80 mW | - | - |
| Product Type | RF Bipolar Transistors | - | - |
| Factory Pack Quantity | 3000 | - | - |
| Subcategory | Transistors | - | - |
| For Use With Related Products | - | - | [email protected] |
| Series | - | - | - |
| Frequency | - | - | 20GHz ~ 25GHz |
| Supplied Contents | - | - | Board |