PartNumber | NESG270034-T1-AZ | NESG270034-T1-AZ , EM6A9 | NESG270034-T1-AZ , EM6A9320BIA-4H |
Description | RF Bipolar Transistors NPN Silicon Med Pwr Transistor | ||
Manufacturer | CEL | - | - |
Product Category | RF Bipolar Transistors | - | - |
RoHS | E | - | - |
Transistor Type | Bipolar | - | - |
Technology | SiGe | - | - |
Transistor Polarity | NPN | - | - |
Emitter Base Voltage VEBO | 2.8 V | - | - |
Continuous Collector Current | 0.75 A | - | - |
Minimum Operating Temperature | - 65 C | - | - |
Maximum Operating Temperature | + 150 C | - | - |
Configuration | Single | - | - |
Package / Case | Power Mini-Mold | - | - |
Packaging | Reel | - | - |
Collector Base Voltage VCBO | 25 V | - | - |
DC Current Gain hFE Max | 80 at 100 mA at 3 V | - | - |
Height | 1.5 mm | - | - |
Length | 4.5 mm | - | - |
Operating Frequency | 900 MHz | - | - |
Type | RF Silicon Germanium | - | - |
Width | 2.5 mm | - | - |
Brand | CEL | - | - |
Pd Power Dissipation | 1900 mW | - | - |
Product Type | RF Bipolar Transistors | - | - |
Factory Pack Quantity | 1000 | - | - |
Subcategory | Transistors | - | - |