PartNumber | NSBC123EDXV6T1G | NSBC123EPDXV6T1G | NSBC123EF3T5G |
Description | Bipolar Transistors - Pre-Biased 100mA 50V Dual NPN | Bipolar Transistors - Pre-Biased SSP SOT563 DUAL 2.2/2.2K | Bipolar Transistors - Pre-Biased NPN DIGITAL TRANSISTOR (B |
Manufacturer | ON Semiconductor | ON Semiconductor | ON Semiconductor |
Product Category | Bipolar Transistors - Pre-Biased | Bipolar Transistors - Pre-Biased | Bipolar Transistors - Pre-Biased |
RoHS | Y | Y | Y |
Configuration | Dual | Dual | - |
Transistor Polarity | NPN | NPN, PNP | - |
Typical Input Resistor | 2.2 kOhms | 2.2 kOhms | - |
Typical Resistor Ratio | 1 | 1 | - |
Mounting Style | SMD/SMT | SMD/SMT | - |
Package / Case | SOT-563-6 | SOT-563-6 | - |
DC Collector/Base Gain hfe Min | 8 | 8 | - |
Collector Emitter Voltage VCEO Max | 50 V | 50 V | - |
Continuous Collector Current | 0.1 A | 100 mA | - |
Peak DC Collector Current | 100 mA | 100 mA | - |
Pd Power Dissipation | 357 mW | - | - |
Minimum Operating Temperature | - 55 C | - 55 C | - |
Maximum Operating Temperature | + 150 C | + 150 C | - |
Series | NSBC123EDXV6 | NSBC123EPDXV6 | NSBC123EF3 |
Packaging | Reel | Reel | Reel |
DC Current Gain hFE Max | 8 | - | - |
Height | 0.55 mm | 0.55 mm | - |
Length | 1.6 mm | 1.6 mm | - |
Width | 1.2 mm | 1.2 mm | - |
Brand | ON Semiconductor | ON Semiconductor | ON Semiconductor |
Product Type | BJTs - Bipolar Transistors - Pre-Biased | BJTs - Bipolar Transistors - Pre-Biased | BJTs - Bipolar Transistors - Pre-Biased |
Factory Pack Quantity | 4000 | 4000 | 8000 |
Subcategory | Transistors | Transistors | Transistors |
Unit Weight | 0.000106 oz | 0.000106 oz | - |
Number of Channels | - | 2 Channel | - |