OMO ElectronicOMO Electronic
Expand menu
0 Wagen

NSBC123JDXV6T5G

NSBC123JDXV6T5G
Mfr. #:
NSBC123JDXV6T5G
Hersteller:
ON Semiconductor
Beschreibung:
Bipolar Transistors - Pre-Biased 100mA 50V Dual NPN
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
NSBC123JDXV6T5G Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
ON Semiconductor
Produktkategorie:
Bipolartransistoren – vorgespannt
RoHS:
Y
Aufbau:
Dual
Polarität des Transistors:
NPN
Typischer Eingangswiderstand:
2.2 kOhms
Typisches Widerstandsverhältnis:
0.047
Montageart:
SMD/SMT
Paket / Koffer:
SOT-563-6
DC-Kollektor/Basisverstärkung hfe Min:
80
Kollektor- Emitterspannung VCEO Max:
50 V
Kontinuierlicher Kollektorstrom:
0.1 A
Spitzen-DC-Kollektorstrom:
100 mA
Pd - Verlustleistung:
357 mW
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Serie:
NSBC123JDXV6
Verpackung:
Spule
DC-Stromverstärkung hFE Max:
80
Höhe:
0.55 mm
Länge:
1.6 mm
Breite:
1.2 mm
Marke:
ON Semiconductor
Produktart:
BJTs – Bipolartransistoren – Vorgespannt
Werkspackungsmenge:
8000
Unterkategorie:
Transistoren
Gewichtseinheit:
0.000106 oz
Tags
NSBC123JDX, NSBC123JD, NSBC123J, NSBC123, NSBC12, NSBC, NSB
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***r Electronics
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN, Silicon
***emi
Dual NPN Bipolar Digital Transistor (BRT)
***et
Trans Digital BJT NPN 50V 0.1A 6-Pin SOT-563 T/R
***el Electronic
Bipolar Transistors - Pre-Biased 100mA 50V Dual NPN
Teil # Mfg. Beschreibung Aktie Preis
NSBC123JDXV6T5G
DISTI # NSBC123JDXV6T5GOS-ND		ON SemiconductorTRANS PREBIAS DUAL NPN SOT563
RoHS: Compliant
Min Qty: 8000
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 8000:$0.0977
NSBC123JDXV6T5G
DISTI # NSBC123JDXV6T5G		ON SemiconductorTrans Digital BJT NPN 50V 0.1A 6-Pin SOT-563 T/R - Tape and Reel (Alt: NSBC123JDXV6T5G)
RoHS: Compliant
Min Qty: 8000
Container: Reel		Americas - 0
  • 80000:$0.0739
  • 48000:$0.0749
  • 32000:$0.0759
  • 16000:$0.0769
  • 8000:$0.0779
NSBC123JDXV6T5G
DISTI # NSBC123JDXV6T5G		ON SemiconductorTrans Digital BJT NPN 50V 0.1A 6-Pin SOT-563 T/R - Bulk (Alt: NSBC123JDXV6T5G)
RoHS: Compliant
Min Qty: 3572
Container: Bulk		Americas - 0
  • 35720:$0.0859
  • 17860:$0.0879
  • 10716:$0.0889
  • 7144:$0.0899
  • 3572:$0.0909
NSBC123JDXV6T5G
DISTI # 863-NSBC123JDXV6T5G		ON SemiconductorBipolar Transistors - Pre-Biased 100mA 50V Dual NPN
RoHS: Compliant		8000
  • 1:$0.3400
  • 10:$0.2660
  • 100:$0.1440
  • 1000:$0.1080
  • 2500:$0.0930
  • 8000:$0.0870
  • 24000:$0.0800
  • 48000:$0.0770
  • 96000:$0.0740
NSBC123JDXV6T1G
DISTI # 863-NSBC123JDXV6T1G		ON SemiconductorBipolar Transistors - Pre-Biased 100mA 50V Dual NPN
RoHS: Compliant		7984
  • 1:$0.3400
  • 10:$0.2660
  • 100:$0.1440
  • 1000:$0.1080
  • 4000:$0.0930
  • 8000:$0.0870
  • 24000:$0.0800
  • 48000:$0.0770
  • 100000:$0.0740
NSBC123JDXV6T5GON SemiconductorSmall Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN, Silicon
RoHS: Compliant		40000
  • 1000:$0.0900
  • 100:$0.1000
  • 500:$0.1000
  • 1:$0.1100
  • 25:$0.1100
Bild Teil # Beschreibung
NSBC123JPDXV6T1G

Mfr.#: NSBC123JPDXV6T1G

OMO.#: OMO-NSBC123JPDXV6T1G

 Bipolar Transistors - Pre-Biased 100mA Complementary 50V Dual NPN & PNP
NSBC123TPDP6T5G

Mfr.#: NSBC123TPDP6T5G

OMO.#: OMO-NSBC123TPDP6T5G

 Bipolar Transistors - Pre-Biased SOT-963 COMP NBRT
NSBC123EPDXV6T1

Mfr.#: NSBC123EPDXV6T1

OMO.#: OMO-NSBC123EPDXV6T1

 Bipolar Transistors - Pre-Biased 100mA Complementary
NSBC123EDXV6T1

Mfr.#: NSBC123EDXV6T1

OMO.#: OMO-NSBC123EDXV6T1-ON-SEMICONDUCTOR

 TRANS 2NPN PREBIAS 0.5W SOT563
NSBC123JDXV6T1

Mfr.#: NSBC123JDXV6T1

OMO.#: OMO-NSBC123JDXV6T1-ON-SEMICONDUCTOR

 TRANS 2NPN PREBIAS 0.5W SOT563
NSBC123JDXV6T1G

Mfr.#: NSBC123JDXV6T1G

OMO.#: OMO-NSBC123JDXV6T1G-1190

 TRANS 2NPN PREBIAS 0.5W SOT563
NSBC123JPDXV6T5

Mfr.#: NSBC123JPDXV6T5

OMO.#: OMO-NSBC123JPDXV6T5-1190

 - Bulk (Alt: NSBC123JPDXV6T5)
NSBC123TDP6T5G

Mfr.#: NSBC123TDP6T5G

OMO.#: OMO-NSBC123TDP6T5G-ON-SEMICONDUCTOR

 Bipolar Transistors - Pre-Biased DUAL NBRT
NSBC123JPDXV6T1G

Mfr.#: NSBC123JPDXV6T1G

OMO.#: OMO-NSBC123JPDXV6T1G-ON-SEMICONDUCTOR

 Bipolar Transistors - Pre-Biased 100mA Complementary 50V Dual NPN & PNP
NSBC123TF3T5G

Mfr.#: NSBC123TF3T5G

OMO.#: OMO-NSBC123TF3T5G-ON-SEMICONDUCTOR

 Bipolar Transistors - Pre-Biased SOT-1123 NBRT TRANSISTOR
Verfügbarkeit
Aktie:
Available
Auf Bestellung:
1991
Menge eingeben:
Der aktuelle Preis von NSBC123JDXV6T5G dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
0,34 $
0,34 $
10
0,27 $
2,66 $
100
0,14 $
14,40 $
1000
0,11 $
108,00 $
2500
0,09 $
232,50 $
Beginnen mit
Neueste Produkte
  • IO-Link™ Devices
    IO-Link™ Devices
    Maxim Integrated’s complete portfolio of IO-link devices integrate value-adding features to provide design flexibility and offload the local processor.
  • Compare NSBC123JDXV6T5G
    Compare NSBC123JDXV6T5G
    NSBC123JDXV6T vs NSBC123JDXV6T1 vs NSBC123JDXV6T1G
  • Large Diameter Clear Hole Spacers
    Large Diameter Clear Hole Spacers
    RAF's large diameter clear hole spacers for industrial applications are available in standard stock sizes, various materials and finishes, and custom options.
  • WE-ExB Series Common Mode Power Line Choke
    WE-ExB Series Common Mode Power Line Choke
    Wurth's WE-ExB series is the double core made of MnZn and NiZn. Its insertion loss has a range of effect over a broader frequency range than does a single NiZn or MnZn core.
  • CPI2-B1-REU Production Device Programmer
    CPI2-B1-REU Production Device Programmer
    Phyton's CPI2-B1-REU in-system programmer supports Renesas microcontrollers, memory devices, and MCUs from other manufacturers.
  • CFSH05-20L Schottky Diode
    CFSH05-20L Schottky Diode
    Central Semiconductor's space saving, low profile Schottky diode for applications including DC-DC conversion and circuit protection.
More Newest Products
Top