PartNumber | NTHD4102PT1G | NTHD40102PT1G | NTHD4102P |
Description | MOSFET -20V -4.1A Dual P-Channel | ||
Manufacturer | ON Semiconductor | - | ON |
Product Category | MOSFET | - | FETs - Arrays |
RoHS | Y | - | - |
Technology | Si | - | - |
Mounting Style | SMD/SMT | - | - |
Package / Case | ChipFET-8 | - | - |
Number of Channels | 2 Channel | - | - |
Transistor Polarity | P-Channel | - | - |
Vds Drain Source Breakdown Voltage | 20 V | - | - |
Id Continuous Drain Current | 4.1 A | - | - |
Rds On Drain Source Resistance | 120 mOhms | - | - |
Vgs Gate Source Voltage | 8 V | - | - |
Minimum Operating Temperature | - 55 C | - | - |
Maximum Operating Temperature | + 150 C | - | - |
Pd Power Dissipation | 600 mW | - | - |
Configuration | Dual | - | - |
Channel Mode | Enhancement | - | - |
Packaging | Reel | - | - |
Height | 1.05 mm | - | - |
Length | 3.05 mm | - | - |
Product | MOSFET Small Signal | - | - |
Series | NTHD4102P | - | - |
Transistor Type | 2 P-Channel | - | - |
Type | MOSFET | - | - |
Width | 1.65 mm | - | - |
Brand | ON Semiconductor | - | - |
Forward Transconductance Min | 7 S | - | - |
Fall Time | 12 ns | - | - |
Product Type | MOSFET | - | - |
Rise Time | 12 ns | - | - |
Factory Pack Quantity | 3000 | - | - |
Subcategory | MOSFETs | - | - |
Typical Turn Off Delay Time | 32 ns | - | - |
Typical Turn On Delay Time | 5.5 ns | - | - |
Unit Weight | 0.002998 oz | - | - |
Hersteller | Teil # | Beschreibung | RFQ |
---|---|---|---|
NTHD4502NT1G | MOSFET 30V 3.9A Dual N-Channel | ||
NTHD4102PT1G | MOSFET -20V -4.1A Dual P-Channel | ||
NTHD4508NT1G | MOSFET 20V 4.1A Dual N-Channel | ||
NTHD4P02FT1G | MOSFET -20V -3A P-Channel w/3A Schottky | ||
NTHD40102PT1G | Neu und Original | ||
NTHD4102P | Neu und Original | ||
NTHD4102PT1G(C7K | Neu und Original | ||
NTHD4401P | Neu und Original | ||
NTHD4401PT1G , FLZ30VC | Neu und Original | ||
NTHD4401PT1G PB-FREE | Neu und Original | ||
NTHD4401PT1G/C4X | Neu und Original | ||
NTHD4402PT1 | Neu und Original | ||
NTHD4502N | Neu und Original | ||
NTHD4508N | Neu und Original | ||
NTHD4508NT1 | Neu und Original | ||
NTHD4508NT1G , FLZ30VD | Neu und Original | ||
NTHD4508NT1G/C8X | Neu und Original | ||
NTHD4508T1G | Neu und Original | ||
NTHD4902FTIG | Neu und Original | ||
NTHD4N02F , FLZ33VC | Neu und Original | ||
NTHD4N02FT1 , FLZ33VD | Neu und Original | ||
NTHD4N02FT1G/C2J | Neu und Original | ||
NTHD4N02FT1G/C2X | Neu und Original | ||
NTHD4N02FT1X2 | Neu und Original | ||
NTHD4P01FT1G | Neu und Original | ||
NTHD4P02 | Neu und Original | ||
NTHD4P02F | Neu und Original | ||
NTHD4P02FT1 | Power Field-Effect Transistor, 2.2A I(D), 20V, 0.155ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | ||
NTHD4P02FT1 , FLZ36VB | Neu und Original | ||
NTHD4P02FT1-D | Neu und Original | ||
NTHD4P02FT1-D(4703DC) | Neu und Original | ||
NTHD4P02FT1-ON | Neu und Original | ||
NTHD4102PT1G-CUT TAPE | Neu und Original | ||
ON Semiconductor |
NTHD4N02FT1G | MOSFET 20V 3.9A N-Channel w/3.7A Schottky | |
NTHD4401PT3 | MOSFET -20V -3A Dual | ||
NTHD4401PT3G | MOSFET -20V -3A Dual P-Channel | ||
NTHD4N02FT1 | MOSFET 20V 3.9A N-Channel | ||
NTHD4401PT1 | MOSFET -20V -3A Dual | ||
NTHD4P02FT1G | Neu und Original | ||
NTHD4102PT1G | Neu und Original | ||
NTHD4102PT3G | MOSFET 2P-CH 20V 2.9A CHIPFET | ||
NTHD4401PT1 | MOSFET 2P-CH 20V 2.1A CHIPFET | ||
NTHD4401PT1G | MOSFET 2P-CH 20V 2.1A CHIPFET | ||
NTHD4401PT3G | MOSFET 2P-CH 20V 2.1A CHIPFET | ||
NTHD4502NT1 | MOSFET 2N-CH 30V 2.2A CHIPFET | ||
NTHD4502NT1G | MOSFET 2N-CH 30V 2.2A CHIPFET | ||
NTHD4508NT1G | Neu und Original | ||
NTHD4N02FT1 | MOSFET N-CH 20V 2.9A CHIPFET | ||
NTHD4N02FT1G | MOSFET N-CH 20V 2.9A CHIPFET | ||
NTHD4401PT3 | MOSFET 2P-CH 20V 2.1A CHIPFET |