NTHD4102PT

NTHD4102PT1G vs NTHD4102PT1G(C7K vs NTHD4102PT1G-CUT TAPE

 
PartNumberNTHD4102PT1GNTHD4102PT1G(C7KNTHD4102PT1G-CUT TAPE
DescriptionMOSFET -20V -4.1A Dual P-Channel
ManufacturerON Semiconductor--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseChipFET-8--
Number of Channels2 Channel--
Transistor PolarityP-Channel--
Vds Drain Source Breakdown Voltage20 V--
Id Continuous Drain Current4.1 A--
Rds On Drain Source Resistance120 mOhms--
Vgs Gate Source Voltage8 V--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation600 mW--
ConfigurationDual--
Channel ModeEnhancement--
PackagingReel--
Height1.05 mm--
Length3.05 mm--
ProductMOSFET Small Signal--
SeriesNTHD4102P--
Transistor Type2 P-Channel--
TypeMOSFET--
Width1.65 mm--
BrandON Semiconductor--
Forward Transconductance Min7 S--
Fall Time12 ns--
Product TypeMOSFET--
Rise Time12 ns--
Factory Pack Quantity3000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time32 ns--
Typical Turn On Delay Time5.5 ns--
Unit Weight0.002998 oz--
Hersteller Teil # Beschreibung RFQ
NTHD4102PT1G MOSFET -20V -4.1A Dual P-Channel
NTHD4102PT1G(C7K Neu und Original
NTHD4102PT1G-CUT TAPE Neu und Original
ON Semiconductor
ON Semiconductor
NTHD4102PT1G Neu und Original
NTHD4102PT3G MOSFET 2P-CH 20V 2.9A CHIPFET
Top