NTHD4508NT1G

NTHD4508NT1G vs NTHD4508NT1G , FLZ30VD vs NTHD4508NT1G/C8X

 
PartNumberNTHD4508NT1GNTHD4508NT1G , FLZ30VDNTHD4508NT1G/C8X
DescriptionMOSFET 20V 4.1A Dual N-Channel
ManufacturerON Semiconductor--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseChipFET-8--
Number of Channels2 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage20 V--
Id Continuous Drain Current4.1 A--
Rds On Drain Source Resistance80 mOhms--
Vgs Gate Source Voltage12 V--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation1.13 W--
ConfigurationDual--
Channel ModeEnhancement--
PackagingReel--
Height1.05 mm--
Length3.05 mm--
ProductMOSFET Small Signal--
SeriesNTHD4508N--
Transistor Type2 N-Channel--
TypeMOSFET--
Width1.65 mm--
BrandON Semiconductor--
Forward Transconductance Min6 S--
Fall Time15 ns--
Product TypeMOSFET--
Rise Time15 ns--
Factory Pack Quantity3000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time10 ns--
Typical Turn On Delay Time5 ns--
Unit Weight0.002998 oz--
Hersteller Teil # Beschreibung RFQ
NTHD4508NT1G MOSFET 20V 4.1A Dual N-Channel
NTHD4508NT1G , FLZ30VD Neu und Original
NTHD4508NT1G/C8X Neu und Original
ON Semiconductor
ON Semiconductor
NTHD4508NT1G Neu und Original
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