 | | | |
| PartNumber | NTHD4P02F | NTHD4P02FT1 | NTHD4P02FT1 , FLZ36VB |
| Description | Power Field-Effect Transistor, 2.2A I(D), 20V, 0.155ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | ||
| Manufacturer | SipuSemi | - | - |
| Product Category | FETs - Single | - | - |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
| NTHD4P02FT1G | MOSFET -20V -3A P-Channel w/3A Schottky | ||
| NTHD4P02F | Neu und Original | ||
| NTHD4P02FT1 | Power Field-Effect Transistor, 2.2A I(D), 20V, 0.155ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | ||
| NTHD4P02FT1 , FLZ36VB | Neu und Original | ||
| NTHD4P02FT1-D | Neu und Original | ||
| NTHD4P02FT1-D(4703DC) | Neu und Original | ||
| NTHD4P02FT1-ON | Neu und Original | ||
| NTHD4P02FT1G , FLZ3V3B | Neu und Original | ||
| NTHD4P02FT1G- | Neu und Original | ||
| NTHD4P02FT1G/C3X | Neu und Original | ||
ON Semiconductor |
NTHD4P02FT1G | Neu und Original |