NTJD4105

NTJD4105CT1G vs NTJD4105CT1 vs NTJD4105CT1 , FLZ8V2A

 
PartNumberNTJD4105CT1GNTJD4105CT1NTJD4105CT1 , FLZ8V2A
DescriptionMOSFET 20V/-8V 0.63A/-.775A ComplementaryMOSFET 20V/-8V 0.63A/-.775A
ManufacturerON Semiconductor--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseSOT-363-6--
Number of Channels2 Channel--
Transistor PolarityN-Channel, P-Channel--
Vds Drain Source Breakdown Voltage20 V, 8 V--
Id Continuous Drain Current630 mA, - 775 mA--
Rds On Drain Source Resistance375 mOhms, 900 mOhms--
Vgs th Gate Source Threshold Voltage600 mV, 450 mV--
Vgs Gate Source Voltage4.5 V, - 1.8 V--
Qg Gate Charge1.3 nC, 2.2 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation0.55 W--
ConfigurationDual--
Channel ModeEnhancement--
PackagingReel--
Height0.9 mm--
Length2 mm--
ProductMOSFET Small Signal--
SeriesNTJD4105C--
Transistor Type1 N-Channel, 1 P-Channel--
TypeMOSFET--
Width1.25 mm--
BrandON Semiconductor--
Forward Transconductance Min2 S, 2 S--
Fall Time506 ns, 36 ns--
Product TypeMOSFET--
Rise Time227 ns, 23 ns--
Factory Pack Quantity3000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time786 ns, 50 ns--
Typical Turn On Delay Time83 ns, 13 ns--
Unit Weight0.000265 oz--
Hersteller Teil # Beschreibung RFQ
NTJD4105CT1G MOSFET 20V/-8V 0.63A/-.775A Complementary
NTJD4105CT2G MOSFET 20V/-8V 0.63A/-.775A Complementary
NTJD4105CT1 MOSFET 20V/-8V 0.63A/-.775A
NTJD4105CT1 , FLZ8V2A Neu und Original
NTJD4105CT1G , MAX6835FX Neu und Original
NTJD4105CT1G- Neu und Original
NTJD4105CT1H Neu und Original
NTJD4105CT1G-CUT TAPE Neu und Original
ON Semiconductor
ON Semiconductor
NTJD4105CT2G MOSFET N/P-CH 20V/8V SOT-363
NTJD4105CT1G MOSFET N/P-CH 20V/8V SOT-363
NTJD4105CT2 MOSFET N/P-CH 20V/8V SOT-363
NTJD4105CT4G MOSFET N/P-CH 20V/8V SOT-363
NTJD4105CT4 MOSFET N/P-CH 20V/8V SOT-363
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