 |  | | |
| PartNumber | NTJD5121NT1G | NTJD5121NT1 | NTJD5121N |
| Description | MOSFET NFET SC88D 60V 295mA | ||
| Manufacturer | ON Semiconductor | - | ON |
| Product Category | MOSFET | - | IC Chips |
| RoHS | Y | - | - |
| Technology | Si | - | Si |
| Mounting Style | SMD/SMT | - | SMD/SMT |
| Package / Case | SC-88-6 | - | - |
| Number of Channels | 2 Channel | - | 2 Channel |
| Transistor Polarity | N-Channel | - | N-Channel |
| Vds Drain Source Breakdown Voltage | 60 V | - | - |
| Id Continuous Drain Current | 295 mA | - | - |
| Rds On Drain Source Resistance | 1.6 Ohms | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Minimum Operating Temperature | - 55 C | - | - 55 C |
| Maximum Operating Temperature | + 150 C | - | + 150 C |
| Pd Power Dissipation | 250 mW | - | - |
| Configuration | Dual | - | Dual |
| Channel Mode | Enhancement | - | Enhancement |
| Packaging | Reel | - | Digi-ReelR Alternate Packaging |
| Height | 0.9 mm | - | - |
| Length | 2 mm | - | - |
| Series | NTJD5121N | - | NTJD5121N |
| Transistor Type | 2 N-Channel | - | 2 N-Channel |
| Width | 1.25 mm | - | - |
| Brand | ON Semiconductor | - | - |
| Fall Time | 32 ns | - | 32 ns |
| Product Type | MOSFET | - | - |
| Rise Time | 34 ns | - | 34 ns |
| Factory Pack Quantity | 3000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 34 ns | - | 34 ns |
| Typical Turn On Delay Time | 22 ns | - | 22 ns |
| Unit Weight | 0.000212 oz | - | - |
| Package Case | - | - | 6-TSSOP, SC-88, SOT-363 |
| Operating Temperature | - | - | -55°C ~ 150°C (TJ) |
| Mounting Type | - | - | Surface Mount |
| Supplier Device Package | - | - | SC-88/SC70-6/SOT-363 |
| FET Type | - | - | 2 N-Channel (Dual) |
| Power Max | - | - | 250mW |
| Drain to Source Voltage Vdss | - | - | 60V |
| Input Capacitance Ciss Vds | - | - | 26pF @ 20V |
| FET Feature | - | - | Logic Level Gate |
| Current Continuous Drain Id 25°C | - | - | 295mA |
| Rds On Max Id Vgs | - | - | 1.6 Ohm @ 500mA, 10V |
| Vgs th Max Id | - | - | 2.5V @ 250μA |
| Gate Charge Qg Vgs | - | - | 0.9nC @ 4.5V |
| Pd Power Dissipation | - | - | 250 mW |
| Vgs Gate Source Voltage | - | - | 20 V |
| Id Continuous Drain Current | - | - | 295 mA |
| Vds Drain Source Breakdown Voltage | - | - | 60 V |
| Rds On Drain Source Resistance | - | - | 1.6 Ohms |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
| NTJD5121NT1G | MOSFET NFET SC88D 60V 295mA | ||
| NTJD5121NT2G | MOSFET NFET SC88D 60V 295mA | ||
| NTJD5121NT1 | Neu und Original | ||
| NTJD5121N | Neu und Original | ||
| NTJD5121NT1G , FLZ8V2C | Neu und Original | ||
| NTJD5121NT1G-001 | Neu und Original | ||
| NTJD5121NT1G-CUT TAPE | Neu und Original | ||
ON Semiconductor |
NTJD5121NT2G | MOSFET 2N-CH 60V 0.295A SOT363 | |
| NTJD5121NT1G | MOSFET 2N-CH 60V 0.295A SOT363 |