NTLJS31

NTLJS3113PT1G vs NTLJS3113 vs NTLJS3113P

 
PartNumberNTLJS3113PT1GNTLJS3113NTLJS3113P
DescriptionMOSFET PFET 2X2 20V 9.5A 42MOHM
ManufacturerON Semiconductor-ON
Product CategoryMOSFET-FETs - Single
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseWDFN-6--
Number of Channels1 Channel--
Transistor PolarityP-Channel--
Vds Drain Source Breakdown Voltage20 V--
Id Continuous Drain Current5.8 A--
Rds On Drain Source Resistance90 mOhms--
Vgs th Gate Source Threshold Voltage670 mV--
Vgs Gate Source Voltage8 V--
Qg Gate Charge13 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation1.9 W--
ConfigurationSingle--
Channel ModeEnhancement--
PackagingReel--
Height0.75 mm--
Length2 mm--
ProductMOSFET Small Signal--
SeriesNTLJS3113P--
Transistor Type1 P-Channel--
Width2 mm--
BrandON Semiconductor--
Forward Transconductance Min5.9 S--
Fall Time56.5 ns--
Product TypeMOSFET--
Rise Time17.5 ns--
Factory Pack Quantity3000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time60 ns--
Typical Turn On Delay Time6.9 ns--
Unit Weight0.000317 oz--
Hersteller Teil # Beschreibung RFQ
NTLJS3113PT1G MOSFET PFET 2X2 20V 9.5A 42MOHM
NTLJS3113 Neu und Original
NTLJS3113P Neu und Original
ON Semiconductor
ON Semiconductor
NTLJS3113PTAG MOSFET PFET 20V 9.5A 42MOHM 2X2
NTLJS3180PZTAG MOSFET 20V UCOOL SNGL P-CH 7.7A
NTLJS3113PTAG MOSFET P-CH 20V 3.5A 6-WDFN
NTLJS3113PT1G IGBT Transistors MOSFET PFET 2X2 20V 9.5A 42MOHM
NTLJS3180PZTAG MOSFET P-CH 20V 3.5A 6-WDFN
NTLJS3180PZTBG MOSFET P-CH 20V 3.5A 6-WDFN
Top