 | | |
| PartNumber | NTY100N10 | NTY100N10G |
| Description | MOSFET 100V 123A N-Channel | MOSFET 100V 123A N-Channel |
| Manufacturer | ON Semiconductor | ON Semiconductor |
| Product Category | MOSFET | MOSFET |
| RoHS | N | Y |
| Technology | Si | Si |
| Mounting Style | Through Hole | Through Hole |
| Package / Case | TO-264-3 | TO-264-3 |
| Number of Channels | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 100 V | 100 V |
| Id Continuous Drain Current | 123 A | 123 A |
| Rds On Drain Source Resistance | 9 mOhms | 9 mOhms |
| Vgs Gate Source Voltage | 20 V | 20 V |
| Minimum Operating Temperature | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C |
| Pd Power Dissipation | 313 W | 313 W |
| Configuration | Single | Single |
| Channel Mode | Enhancement | Enhancement |
| Packaging | Tube | Tube |
| Height | 26.4 mm | 26.4 mm |
| Length | 20.3 mm | 20.3 mm |
| Transistor Type | 1 N-Channel | 1 N-Channel |
| Width | 5.3 mm | 5.3 mm |
| Brand | ON Semiconductor | ON Semiconductor |
| Fall Time | 250 ns | 250 ns |
| Product Type | MOSFET | MOSFET |
| Rise Time | 150 ns | 150 ns |
| Factory Pack Quantity | 25 | 1 |
| Subcategory | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 340 ns | 340 ns |
| Typical Turn On Delay Time | 30 ns | 30 ns |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
ON Semiconductor |
NTY100N10 | MOSFET 100V 123A N-Channel | |
| NTY100N10G | MOSFET 100V 123A N-Channel | ||
| NTY100N10 | MOSFET N-CH 100V 123A TO-264 | ||
| NTY100N10G | MOSFET N-CH 100V 123A TO-264 | ||
| NTY100N10E | Neu und Original | ||
| NTY10N100E | Neu und Original | ||
| NTY4 | Neu und Original | ||
| NTY4Y | Neu und Original | ||
| NTY4Y-21 | Neu und Original | ||
| NTY4Y-45 | Neu und Original |