 |  | | |
| PartNumber | NTZD3155CT1G | NTZD3155C | NTZD3155CT1G , FMA2T148 |
| Description | MOSFET 20V 540mA/-430mA Complementary w/ESD | ||
| Manufacturer | ON Semiconductor | ON Semiconductor | - |
| Product Category | MOSFET | FETs - Arrays | - |
| RoHS | Y | - | - |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | SOT-563-6 | - | - |
| Number of Channels | 2 Channel | 2 Channel | - |
| Transistor Polarity | N-Channel, P-Channel | N-Channel P-Channel | - |
| Vds Drain Source Breakdown Voltage | 20 V | - | - |
| Id Continuous Drain Current | 540 mA | - | - |
| Rds On Drain Source Resistance | 550 mOhms, 900 mOhms | - | - |
| Vgs Gate Source Voltage | 6 V | - | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Pd Power Dissipation | 250 mW | - | - |
| Configuration | Dual | N-Channel P-Channel | - |
| Channel Mode | Enhancement | Enhancement | - |
| Packaging | Reel | Digi-ReelR Alternate Packaging | - |
| Height | 0.55 mm | - | - |
| Length | 1.6 mm | - | - |
| Product | MOSFET Small Signal | - | - |
| Series | NTZD3155C | NTZD3155C | - |
| Transistor Type | 1 N-Channel, 1 P-Channel | 1 N-Channel 1 P-Channel | - |
| Width | 1.2 mm | - | - |
| Brand | ON Semiconductor | - | - |
| Fall Time | 4 ns, 12 ns | 4 ns 12 ns | - |
| Product Type | MOSFET | - | - |
| Rise Time | 4 ns, 12 ns | 4 ns 12 ns | - |
| Factory Pack Quantity | 4000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 16 ns, 35 ns | 16 ns 35 ns | - |
| Typical Turn On Delay Time | 6 ns, 10 ns | 6 ns 10 ns | - |
| Unit Weight | 0.000106 oz | 0.000289 oz | - |
| Package Case | - | SOT-563, SOT-666 | - |
| Operating Temperature | - | -55°C ~ 150°C (TJ) | - |
| Mounting Type | - | Surface Mount | - |
| Supplier Device Package | - | SOT-563 | - |
| FET Type | - | N and P-Channel | - |
| Power Max | - | 250mW | - |
| Drain to Source Voltage Vdss | - | 20V | - |
| Input Capacitance Ciss Vds | - | 150pF @ 16V | - |
| FET Feature | - | Logic Level Gate | - |
| Current Continuous Drain Id 25°C | - | 540mA, 430mA | - |
| Rds On Max Id Vgs | - | 550 mOhm @ 540mA, 4.5V | - |
| Vgs th Max Id | - | 1V @ 250μA | - |
| Gate Charge Qg Vgs | - | 2.5nC @ 4.5V | - |
| Pd Power Dissipation | - | 250 mW | - |
| Vgs Gate Source Voltage | - | 6 V | - |
| Id Continuous Drain Current | - | 540 mA | - |
| Vds Drain Source Breakdown Voltage | - | 20 V | - |
| Rds On Drain Source Resistance | - | 550 mOhms 900 mOhms | - |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
| NTZD3155CT1G | MOSFET 20V 540mA/-430mA Complementary w/ESD | ||
| NTZD3155CT2G | MOSFET COMP 540mA 20V | ||
| NTZD3155C | Neu und Original | ||
| NTZD3155CT1G , FMA2T148 | Neu und Original | ||
| NTZD3155CT1G,THS123,BCP5 | Neu und Original | ||
| NTZD3155CT1G/DMG1016V-7 | Neu und Original | ||
| NTZD3155CT5H | Neu und Original | ||
| NTZD3155CTIG | Neu und Original | ||
| NTZD3155CT1G-CUT TAPE | Neu und Original | ||
ON Semiconductor |
NTZD3155CT5G | MOSFET 20V 540mA/-430mA Complementary w/ESD | |
| NTZD3155CT1H | MOSFET COMP SOT563 20V 540MA TR | ||
| NTZD3155CT1G | Neu und Original | ||
| NTZD3155CT2G | MOSFET N/P-CH 20V SOT-563 | ||
| NTZD3155CT1H | IGBT Transistors MOSFET COMP SOT563 20V 540MA TR | ||
| NTZD3155CT5G | IGBT Transistors MOSFET 20V 540mA/-430mA Complementary w/ESD |