| PartNumber | NVHL025N65S3 | NVHL040N65S3F | NVHL027N65S3F |
| Description | MOSFET SUPERFET3 650V | MOSFET SUPERFET3 650V TO247 PKG | MOSFET SUPERFET3 650V TO247 PKG |
| Manufacturer | ON Semiconductor | ON Semiconductor | ON Semiconductor |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Technology | Si | - | - |
| Mounting Style | Through Hole | Through Hole | Through Hole |
| Package / Case | TO-247-3 | TO-247-3 | TO-247-3 |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 650 V | 650 V | 650 V |
| Id Continuous Drain Current | 75 A | 65 A | 75 A |
| Rds On Drain Source Resistance | 25 mOhms | 40 Ohms | 27.4 mOhms |
| Vgs th Gate Source Threshold Voltage | 2.5 V | 3 V | 3 V |
| Vgs Gate Source Voltage | 30 V | 30 V | 30 V |
| Qg Gate Charge | 236 nC | 153 nC | 227 nC |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
| Pd Power Dissipation | 595 W | 446 W | 595 W |
| Configuration | Single | Single | Single |
| Channel Mode | Enhancement | Enhancement | Enhancement |
| Qualification | AEC-Q101 | AEC-Q101 | AEC-Q101 |
| Tradename | SuperFET | SuperFET III | SuperFET III |
| Packaging | Tube | Tube | Tube |
| Series | SPM3 | SuperFET3 | SuperFET3 |
| Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
| Brand | ON Semiconductor | ON Semiconductor | ON Semiconductor |
| Forward Transconductance Min | 78.5 S | 40 S | 57 S |
| Fall Time | 107 ns | 28 ns | 42 ns |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 109 ns | 53 ns | 59 ns |
| Factory Pack Quantity | 450 | 450 | 450 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 120 ns | 96 ns | 147 ns |
| Typical Turn On Delay Time | 43.3 ns | 41 ns | 46 ns |