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| PartNumber | PBSS5350SS,115 | PBSS5350SS | PBSS5350SS115 |
| Description | Bipolar Transistors - BJT TRANS BISS TAPE-7 | Now Nexperia PBSS5350SS - Small Signal Bipolar Transistor, 2.7A I(C), 50V V(BR)CEO, 2-Element, PNP, Silicon, SO8 | |
| Manufacturer | Nexperia | - | - |
| Product Category | Bipolar Transistors - BJT | - | - |
| RoHS | Y | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | SO-8 | - | - |
| Transistor Polarity | PNP | - | - |
| Configuration | Dual | - | - |
| Collector Emitter Voltage VCEO Max | 50 V | - | - |
| Collector Base Voltage VCBO | 50 V | - | - |
| Emitter Base Voltage VEBO | 5 V | - | - |
| Maximum DC Collector Current | 2.7 A | - | - |
| Minimum Operating Temperature | - 65 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| DC Current Gain hFE Max | 200 at 100 mA, 2 V | - | - |
| Height | 1.45 mm | - | - |
| Length | 5 mm | - | - |
| Packaging | Reel | - | - |
| Width | 4 mm | - | - |
| Brand | Nexperia | - | - |
| DC Collector/Base Gain hfe Min | 200 at 100 mA, 2 V, 200 at 500 mA, 2 V, 180 at 1 A, 2 V, 130 at 2 A, 2 V, 95 at 2.7 A, 2 V | - | - |
| Pd Power Dissipation | 1430 mW | - | - |
| Product Type | BJTs - Bipolar Transistors | - | - |
| Qualification | AEC-Q101 | - | - |
| Factory Pack Quantity | 1000 | - | - |
| Subcategory | Transistors | - | - |
| Part # Aliases | PBSS5350SS T/R | - | - |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
Nexperia |
PBSS5350SS,115 | Bipolar Transistors - BJT TRANS BISS TAPE-7 | |
| PBSS5350SS,115 | TRANS 2PNP 50V 2.7A 8SO | ||
| PBSS5350SS | Neu und Original | ||
| PBSS5350SS115 | Now Nexperia PBSS5350SS - Small Signal Bipolar Transistor, 2.7A I(C), 50V V(BR)CEO, 2-Element, PNP, Silicon, SO8 |