 | | |
| PartNumber | PHB32N06LT,118 | PHB33NQ20T,118 |
| Description | MOSFET TAPE13 MOSFET | MOSFET TRENCHMOS |
| Manufacturer | Nexperia | Nexperia |
| Product Category | MOSFET | MOSFET |
| RoHS | Y | Y |
| Technology | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT |
| Package / Case | TO-263-3 | TO-263-3 |
| Number of Channels | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 60 V | 200 V |
| Id Continuous Drain Current | 34 A | 32.7 A |
| Rds On Drain Source Resistance | 37 mOhms | 77 mOhms |
| Vgs Gate Source Voltage | 15 V | 20 V |
| Minimum Operating Temperature | - 55 C | - 55 C |
| Maximum Operating Temperature | + 175 C | + 175 C |
| Pd Power Dissipation | 97 W | 230 W |
| Configuration | Single | Single |
| Channel Mode | Enhancement | Enhancement |
| Packaging | Reel | Reel |
| Height | 4.5 mm | 4.5 mm |
| Length | 10.3 mm | 10.3 mm |
| Transistor Type | 1 N-Channel | 1 N-Channel |
| Width | 9.4 mm | 9.4 mm |
| Brand | Nexperia | Nexperia |
| Fall Time | 55 ns | 45 ns |
| Product Type | MOSFET | MOSFET |
| Rise Time | 120 ns | 35 ns |
| Factory Pack Quantity | 800 | 800 |
| Subcategory | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 45 ns | 43 ns |
| Typical Turn On Delay Time | 14 ns | 12 ns |
| Part # Aliases | /T3 PHB32N06LT | /T3 PHB33NQ20T |
| Unit Weight | 0.050442 oz | - |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
Nexperia |
PHB32N06LT,118 | MOSFET TAPE13 MOSFET | |
| PHB33NQ20T,118 | MOSFET TRENCHMOS | ||
| PHB32N06LT,118 | IGBT Transistors MOSFET TAPE13 MOSFET | ||
| PHB33NQ20T,118 | RF Bipolar Transistors MOSFET TRENCHMOS | ||
NXP Semiconductors |
PHB38N02LT,118 | MOSFET N-CH 20V 44.7A D2PAK | |
| PHB32N06LT /T3 | MOSFET TAPE13 MOSFET | ||
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| PHB33NQ20T+118 | Now Nexperia PHB33NQ20T - Power Field-Effect Transistor, 32.7A I(D), 200V, 0.077ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D2PAK | ||
| PHB33NQ20T118 | Now Nexperia PHB33NQ20T - Power Field-Effect Transistor, 32.7A I(D), 200V, 0.077ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D2PAK | ||
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