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| PartNumber | PSMN4R3-30PL,127 | PSMN4R3-30BL,118 |
| Description | MOSFET N-CH 30V 4.3 mOhm Logic Level MOSFET | MOSFET Std N-chanMOSFET |
| Manufacturer | Nexperia | Nexperia |
| Product Category | MOSFET | MOSFET |
| RoHS | Y | Y |
| Technology | Si | Si |
| Mounting Style | Through Hole | SMD/SMT |
| Package / Case | TO-220-3 | TO-263-3 |
| Number of Channels | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 30 V | 30 V |
| Id Continuous Drain Current | 100 A | 80 A |
| Rds On Drain Source Resistance | 4.3 mOhms | 4.1 mOhms |
| Pd Power Dissipation | 103 W | 103 W |
| Configuration | Single | Single |
| Packaging | Tube | Reel |
| Transistor Type | 1 N-Channel | 1 N-Channel |
| Brand | Nexperia | Nexperia |
| Fall Time | 21 ns | - |
| Product Type | MOSFET | MOSFET |
| Rise Time | 58 ns | - |
| Factory Pack Quantity | 50 | 800 |
| Subcategory | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 44 ns | - |
| Typical Turn On Delay Time | 28 ns | - |
| Unit Weight | 0.211644 oz | 0.139332 oz |
| Vgs Gate Source Voltage | - | 20 V |
| Minimum Operating Temperature | - | - 55 C |
| Maximum Operating Temperature | - | + 175 C |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
Nexperia |
PSMN4R3-30PL,127 | MOSFET N-CH 30V 4.3 mOhm Logic Level MOSFET | |
| PSMN4R3-30BL,118 | MOSFET Std N-chanMOSFET | ||
| PSMN4R3-30PL,127 | MOSFET N-CH 30V 100A TO220AB | ||
| PSMN4R3-30BL,118 | MOSFET N-CH 30V 100A D2PAK | ||
| PSMN4R3-30BL118 | - Bulk (Alt: PSMN4R3-30BL118) | ||
| PSMN4R3-30PL | MOSFET,N CH,30V,100A,TO-220AB | ||
| PSMN4R3-30PL127 | Now Nexperia PSMN4R3-30PL - Power Field-Effect Transistor, 100A I(D), 30V, 0.0062ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB |