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| PartNumber | PSMN7R0-100PS,127 | PSMN7R0-100BS,118 | PSMN7R0-100ES,127 |
| Description | MOSFET N-CH 100V STD LEVEL MOSFET | MOSFET N-CH 100V 6.8 MOHM MOSFET | RF Bipolar Transistors MOSFET Single NChannel 100V 475A 269W 12mOhms |
| Manufacturer | Nexperia | Nexperia | - |
| Product Category | MOSFET | MOSFET | - |
| RoHS | Y | E | - |
| Technology | Si | Si | - |
| Mounting Style | Through Hole | SMD/SMT | - |
| Package / Case | TO-220-3 | TO-263-3 | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 100 V | 90 V | - |
| Id Continuous Drain Current | 100 A | 100 A | - |
| Rds On Drain Source Resistance | 12 mOhms | 12 mOhms | - |
| Vgs th Gate Source Threshold Voltage | 4.6 V | - | - |
| Vgs Gate Source Voltage | 20 V | 4.3 V | - |
| Qg Gate Charge | 125 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 175 C | - | - |
| Pd Power Dissipation | 269 W | 269 W | - |
| Configuration | Single | Single | - |
| Channel Mode | Enhancement | - | - |
| Packaging | Tube | Reel | - |
| Height | 9.4 mm | - | - |
| Length | 10.3 mm | - | - |
| Transistor Type | 1 N-Channel | 1 N-Channel | - |
| Type | N-Channel 100 V 6.8 mOhms Standard Level MOSFET in TO220 | - | - |
| Width | 4.7 mm | - | - |
| Brand | Nexperia | Nexperia | - |
| Fall Time | 49.5 ns | - | - |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 45.6 ns | - | - |
| Factory Pack Quantity | 50 | 800 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 103.9 ns | - | - |
| Typical Turn On Delay Time | 34.6 ns | - | - |
| Unit Weight | 0.211644 oz | 0.139332 oz | - |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
Nexperia |
PSMN7R0-100PS,127 | MOSFET N-CH 100V STD LEVEL MOSFET | |
| PSMN7R0-100BS,118 | MOSFET N-CH 100V 6.8 MOHM MOSFET | ||
| PSMN7R0-100ES,127 | RF Bipolar Transistors MOSFET Single NChannel 100V 475A 269W 12mOhms | ||
| PSMN7R0-100BS,118 | RF Bipolar Transistors MOSFET N-CH 100V 6.8 MOHM MOSFET | ||
| PSMN7R0-100PS,127 | RF Bipolar Transistors MOSFET N-CH 100V STD LEVEL MOSFET | ||
| PSMN7R0-100BS | Neu und Original | ||
| PSMN7R0-100BS118 | - Bulk (Alt: PSMN7R0-100BS118) | ||
| PSMN7R0-100ES127 | Now Nexperia PSMN7R0-100ES - Power Field-Effect Transistor, 100A I(D), 100V, 0.0068ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA | ||
| PSMN7R0-100PS | Neu und Original | ||
| PSMN7R0-100PS127 | Now Nexperia PSMN7R0-100PS - Power Field-Effect Transistor, 100A I(D), 100V, 0.0068ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | ||
NXP Semiconductors |
PSMN7R0-100XS,127 | IGBT Transistors MOSFET N-CH 100V 6.8 MOHMS STD LVL MOSFET |