PartNumber | PSMN7R0-100PS,127 | PSMN7R0-100PS | PSMN7R0-100PS127 |
Description | MOSFET N-CH 100V STD LEVEL MOSFET | Now Nexperia PSMN7R0-100PS - Power Field-Effect Transistor, 100A I(D), 100V, 0.0068ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | |
Manufacturer | Nexperia | - | - |
Product Category | MOSFET | - | - |
RoHS | Y | - | - |
Technology | Si | - | - |
Mounting Style | Through Hole | - | - |
Package / Case | TO-220-3 | - | - |
Number of Channels | 1 Channel | - | - |
Transistor Polarity | N-Channel | - | - |
Vds Drain Source Breakdown Voltage | 100 V | - | - |
Id Continuous Drain Current | 100 A | - | - |
Rds On Drain Source Resistance | 12 mOhms | - | - |
Vgs th Gate Source Threshold Voltage | 4.6 V | - | - |
Vgs Gate Source Voltage | 20 V | - | - |
Qg Gate Charge | 125 nC | - | - |
Minimum Operating Temperature | - 55 C | - | - |
Maximum Operating Temperature | + 175 C | - | - |
Pd Power Dissipation | 269 W | - | - |
Configuration | Single | - | - |
Channel Mode | Enhancement | - | - |
Packaging | Tube | - | - |
Height | 9.4 mm | - | - |
Length | 10.3 mm | - | - |
Transistor Type | 1 N-Channel | - | - |
Type | N-Channel 100 V 6.8 mOhms Standard Level MOSFET in TO220 | - | - |
Width | 4.7 mm | - | - |
Brand | Nexperia | - | - |
Fall Time | 49.5 ns | - | - |
Product Type | MOSFET | - | - |
Rise Time | 45.6 ns | - | - |
Factory Pack Quantity | 50 | - | - |
Subcategory | MOSFETs | - | - |
Typical Turn Off Delay Time | 103.9 ns | - | - |
Typical Turn On Delay Time | 34.6 ns | - | - |
Unit Weight | 0.211644 oz | - | - |