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| PartNumber | PSMN8R7-80BS,118 | PSMN8R7-80PS,127 | PSMN8R9-100BSEJ |
| Description | MOSFET N-CH 80 V 8.7 MOHM MOSFET | MOSFET N-CHAN 80V 64A | MOSFET PSMN8R9-100BSE/SOT404/D2PAK |
| Manufacturer | Nexperia | Nexperia | Nexperia |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | E | Y | Y |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | Through Hole | - |
| Package / Case | TO-263-3 | TO-220-3 | TO-263-3 |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 73 V | 80 V | - |
| Id Continuous Drain Current | 90 A | 90 A | - |
| Rds On Drain Source Resistance | 14 mOhms | 8.7 mOhms | - |
| Vgs Gate Source Voltage | 4.6 V | 20 V | - |
| Pd Power Dissipation | 170 W | 170 W | - |
| Configuration | Single | Single | - |
| Packaging | Reel | Tube | - |
| Transistor Type | 1 N-Channel | 1 N-Channel | - |
| Brand | Nexperia | Nexperia | Nexperia |
| Product Type | MOSFET | MOSFET | MOSFET |
| Factory Pack Quantity | 800 | 50 | 800 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Unit Weight | 0.139332 oz | 0.211644 oz | - |
| Minimum Operating Temperature | - | - 55 C | - |
| Maximum Operating Temperature | - | + 175 C | - |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
Nexperia |
PSMN8R7-80PS,127 | MOSFET N-CHAN 80V 64A | |
| PSMN8R9-100BSEJ | MOSFET PSMN8R9-100BSE/SOT404/D2PAK | ||
| PSMN8R7-80PS,127 | MOSFET N-CH 80V TO220AB | ||
| PSMN8R7-80BS,118 | RF Bipolar Transistors MOSFET N-CH 80 V 8.7 MOHM MOSFET | ||
| PSMN8R9-100BSEJ | PSMN8R9-100BSE/SOT404/D2PAK | ||
| PSMN8R7-80PS | MOSFET,N CHANNEL,80V,90A,TO-220AB, Transistor Polarity:N Channel, Continuous Drain Current Id:90A, Drain Source Voltage Vds:80V, On Resistance Rds(on):0.0075ohm, Rds(on) Test Voltage Vgs:10V, Th | ||
| PSMN8R7-80BS118 | Now Nexperia PSMN8R7-80BS - Power Field-Effect Transistor, 90A I(D), 80V, 0.0087ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET |