PartNumber | PSMN8R0-40BS,118 | PSMN8R0-40PS,127 | PSMN8R0-80YLX |
Description | MOSFET N-CH 40 V 7.6 MOHM MOSFET | MOSFET N-CH 40V 7.6 mOhm Standard MOSFET | MOSFET PSMN8R0-80YL/LFPAK/REEL 7" Q1/ |
Manufacturer | Nexperia | Nexperia | Nexperia |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | E | Y | E |
Technology | Si | Si | Si |
Mounting Style | SMD/SMT | Through Hole | - |
Package / Case | TO-263-3 | TO-220-3 | LFPAK56-5 |
Number of Channels | 1 Channel | 1 Channel | - |
Transistor Polarity | N-Channel | N-Channel | - |
Vds Drain Source Breakdown Voltage | 36 V | 40 V | - |
Id Continuous Drain Current | 77 A | 77 A | - |
Rds On Drain Source Resistance | 7.6 mOhms | 7.6 mOhms | - |
Vgs Gate Source Voltage | 4.8 V | - | - |
Pd Power Dissipation | 86 W | 86 W | - |
Configuration | Single | Single | - |
Packaging | Reel | Tube | Reel |
Transistor Type | 1 N-Channel | 1 N-Channel | - |
Brand | Nexperia | Nexperia | Nexperia |
Product Type | MOSFET | MOSFET | MOSFET |
Factory Pack Quantity | 800 | 50 | 1500 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Unit Weight | 0.139332 oz | 0.211644 oz | - |
Fall Time | - | 4.7 ns | - |
Rise Time | - | 4.7 ns | - |
Typical Turn Off Delay Time | - | 21 ns | - |
Typical Turn On Delay Time | - | 12 ns | - |
Hersteller | Teil # | Beschreibung | RFQ |
---|---|---|---|
Nexperia |
PSMN8R7-80BS,118 | MOSFET N-CH 80 V 8.7 MOHM MOSFET | |
PSMN8R5-100ESQ | MOSFET PSMN8R5-100ES/I2PAK/STANDARD M | ||
PSMN8R0-40BS,118 | MOSFET N-CH 40 V 7.6 MOHM MOSFET | ||
PSMN8R0-40PS,127 | MOSFET N-CH 40V 7.6 mOhm Standard MOSFET | ||
PSMN8R3-40YS,115 | MOSFET N-CH 40V 8.6 mOhm Standard MOSFET | ||
PSMN8R2-80YS,115 | MOSFET N-CH 80V 8.5 mOhm Standard MOSFET | ||
PSMN8R5-60YS,115 | MOSFET N-CHANNEL 60V STD LEVEL MOSFET | ||
PSMN8R5-100PSQ | MOSFET PSMN8R5-100PS/SIL3P/STANDARD M | ||
PSMN8R0-80YLX | MOSFET PSMN8R0-80YL/LFPAK/REEL 7" Q1/ | ||
PSMN8R5-100ESFQ | MOSFET PSMN8R5-100ESF SOT226/I2PAK | ||
PSMN8R5-100PSFQ | MOSFET PSMN8R5-100PSF SOT78/SIL3P | ||
PSMN8R5-100XSQ | MOSFET PSMN8R5-100XS/TO-220F/STANDARD | ||
PSMN8R0-80YLX | MOSFET N-CH 80V 100A LFPAK56 | ||
PSMN8R7-100YSFQ | PSMN8R7-100YSF/SOT669/LFPAK - Rail/Tube (Alt: PSMN8R7-100YSFX) | ||
PSMN8R5-100ESQ | IGBT Transistors MOSFET PSMN8R5-100ES/I2PAK/RAILH | ||
PSMN8R5-100PSQ | IGBT Transistors MOSFET PSMN8R5-100PS/SIL3P/RAILH | ||
PSMN8R2-80YS,115 | IGBT Transistors MOSFET N-CH 80V 8.5 mOhm Standard MOSFET | ||
PSMN8R3-40YS,115 | IGBT Transistors MOSFET N-CH 40V 8.6 mOhm Standard MOSFET | ||
PSMN8R0-40PS,127 | RF Bipolar Transistors MOSFET N-CH 40V 7.6 mOhm Standard MOSFET | ||
PSMN8R0-40BS,118 | MOSFET N-CH 40V 77A D2PAK | ||
PSMN8R5-100ESFQ | MOSFET N-CHANNEL 100V 97A I2PAK | ||
PSMN8R5-100PSFQ | MOSFET N-CH 100V 98A TO220AB | ||
PSMN8R5-60YS,115 | MOSFET N-CH 60V 76A LFPAK | ||
PSMN8R7-100YSFX | PSMN8R7-100YSF/SOT669/LFPAK | ||
NXP Semiconductors |
PSMN8R0-30YL,115 | MOSFET N-CH 30V 62A LFPAK | |
PSMN8R0-30YLC,115 | MOSFET N-CH 30V 54A LL LFPAK | ||
PSMN8R5-108ESQ | MOSFET N-CH 108V 100A I2PAK | ||
PSMN8R5-100XSQ | IGBT Transistors MOSFET PSMN8R5-100XS/TO-220F/RAILH | ||
PSMN8R0-30YL115 | Now Nexperia PSMN8R0-30YL - Power Field-Effect Transistor, 62A I(D), 30V, 0.0122ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LFPAK | ||
PSMN8R0-30YLC115 | Now Nexperia PSMN8R0-30YLC - Power Field-Effect Transistor, 54A I(D), 30V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LFPAK | ||
PSMN8R0-40BS | Neu und Original | ||
PSMN8R0-40PS | MOSFET Transistor, N Channel, 77 A, 40 V, 6.2 mohm, 10 V, 3 V RoHS Compliant: Yes | ||
PSMN8R0-40PS127 | Now Nexperia PSMN8R0-40PS - Power Field-Effect Transistor, 77A I(D), 40V, 0.0076ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | ||
PSMN8R2-80YS | Neu und Original | ||
PSMN8R2-80YS115 | Neu und Original | ||
PSMN8R3-40YS | MOSFET, N CH, 40V, 70A, SOT669 | ||
PSMN8R5-100ES | Neu und Original | ||
PSMN8R5-100PS | Neu und Original | ||
PSMN8R5-100PS127 | - Bulk (Alt: PSMN8R5-100PS127) | ||
PSMN8R5-100XS | Neu und Original | ||
PSMN8R5-60YS | Neu und Original | ||
PSMN8R5-60YS RJK0655DP | Neu und Original | ||
PSMN8R5-108ES | Darlington Transistors MOSFET N-Channel 100V 8.5mohm Fet | ||
PSMN8R5-108ES127 | Now Nexperia PSMN8R5-108ES - Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET | ||
PSMN8R5-108ESQ127 | Now Nexperia PSMN8R5-108ESQ - Power Field-Effect Transistor, 100A I(D), 108V, 0.0085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA | ||
PSMN8R040PS127 | Now Nexperia PSMN8R040PS - Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET | ||
PSMN8R0-40BS118 | Now Nexperia PSMN8R0-40BS - Power Field-Effect Transistor, 77A I(D), 40V, 0.0076ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | ||
PSMN8R2-80YS,115-CUT TAPE | Neu und Original | ||
PSMN8R7-100YSF,115 | Neu und Original | ||
PSMN8R0-30YL | Neu und Original |