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Quality GuaranteesWe provide 90-360 days warranty.
If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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| Teil # | Mfg. | Beschreibung | Aktie | Preis |
|---|---|---|---|---|
| PSMN8R5-108ESQ127 DISTI # PSMN8R5-108ESQ127 | Avnet, Inc. | - Bulk (Alt: PSMN8R5-108ESQ127) Min Qty: 404 Container: Bulk | Americas - 0 |
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| PSMN8R5-108ESQ127 | NXP Semiconductors | Now Nexperia PSMN8R5-108ESQ - Power Field-Effect Transistor, 100A I(D), 108V, 0.0085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA RoHS: Not Compliant | 330 |
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| Bild | Teil # | Beschreibung |
|---|---|---|
|
Mfr.#: PSMN8R5-60YS,115 OMO.#: OMO-PSMN8R5-60YS-115 |
MOSFET N-CHANNEL 60V STD LEVEL MOSFET |
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Mfr.#: PSMN8R5-100ESFQ OMO.#: OMO-PSMN8R5-100ESFQ |
MOSFET PSMN8R5-100ESF SOT226/I2PAK |
|
Mfr.#: PSMN8R5-100ES OMO.#: OMO-PSMN8R5-100ES-1190 |
Neu und Original |
|
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Mfr.#: PSMN8R5-100PS127 OMO.#: OMO-PSMN8R5-100PS127-1190 |
- Bulk (Alt: PSMN8R5-100PS127) |
|
Mfr.#: PSMN8R5-108ESQ |
MOSFET N-CH 108V 100A I2PAK |
|
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Mfr.#: PSMN8R5-60YS RJK0655DP |
Neu und Original |
|
Mfr.#: PSMN8R5-100PSQ OMO.#: OMO-PSMN8R5-100PSQ-NEXPERIA |
IGBT Transistors MOSFET PSMN8R5-100PS/SIL3P/RAILH |
|
|
Mfr.#: PSMN8R5-108ESQ127 OMO.#: OMO-PSMN8R5-108ESQ127-1190 |
Now Nexperia PSMN8R5-108ESQ - Power Field-Effect Transistor, 100A I(D), 108V, 0.0085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA |
|
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Mfr.#: PSMN8R5-100ESFQ OMO.#: OMO-PSMN8R5-100ESFQ-NEXPERIA |
MOSFET N-CHANNEL 100V 97A I2PAK |
|
Mfr.#: PSMN8R5-60YS,115 |
MOSFET N-CH 60V 76A LFPAK |
