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| PartNumber | PSMN8R5-108ESQ | PSMN8R5-108ES | PSMN8R5-108ES127 |
| Description | MOSFET N-CH 108V 100A I2PAK | Darlington Transistors MOSFET N-Channel 100V 8.5mohm Fet | Now Nexperia PSMN8R5-108ES - Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET |
| Manufacturer | - | NXP Semiconductors | - |
| Product Category | - | Transistors - FETs, MOSFETs - Single | - |
| Packaging | - | Reel | - |
| Unit Weight | - | 0.084199 oz | - |
| Mounting Style | - | Through Hole | - |
| Package Case | - | I2PAK-3 | - |
| Technology | - | Si | - |
| Number of Channels | - | 1 Channel | - |
| Configuration | - | Single | - |
| Transistor Type | - | 1 N-Channel | - |
| Pd Power Dissipation | - | 263 W | - |
| Maximum Operating Temperature | - | + 175 C | - |
| Minimum Operating Temperature | - | - 55 C | - |
| Fall Time | - | 43 ns | - |
| Rise Time | - | 35 ns | - |
| Vgs Gate Source Voltage | - | 4.4 V | - |
| Id Continuous Drain Current | - | 100 A | - |
| Vds Drain Source Breakdown Voltage | - | 108 V | - |
| Vgs th Gate Source Threshold Voltage | - | 3 V | - |
| Rds On Drain Source Resistance | - | 8.5 mOhms | - |
| Transistor Polarity | - | N-Channel | - |
| Typical Turn Off Delay Time | - | 87 ns | - |
| Typical Turn On Delay Time | - | 20 ns | - |
| Qg Gate Charge | - | 111 nC | - |
| Channel Mode | - | Enhancement | - |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
NXP Semiconductors |
PSMN8R5-108ESQ | MOSFET N-CH 108V 100A I2PAK | |
| PSMN8R5-108ES | Darlington Transistors MOSFET N-Channel 100V 8.5mohm Fet | ||
| PSMN8R5-108ES127 | Now Nexperia PSMN8R5-108ES - Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET | ||
| PSMN8R5-108ESQ127 | Now Nexperia PSMN8R5-108ESQ - Power Field-Effect Transistor, 100A I(D), 108V, 0.0085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA |