PSMN8R5-108ES

PSMN8R5-108ES
Mfr. #:
PSMN8R5-108ES
Hersteller:
Rochester Electronics, LLC
Beschreibung:
Darlington Transistors MOSFET N-Channel 100V 8.5mohm Fet
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
PSMN8R5-108ES Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller
NXP Semiconductors
Produktkategorie
Transistoren - FETs, MOSFETs - Single
Verpackung
Spule
Gewichtseinheit
0.084199 oz
Montageart
Durchgangsloch
Paket-Koffer
I2PAK-3
Technologie
Si
Anzahl der Kanäle
1 Channel
Aufbau
Single
Transistor-Typ
1 N-Channel
Pd-Verlustleistung
263 W
Maximale-Betriebstemperatur
+ 175 C
Mindest-Betriebstemperatur
- 55 C
Abfallzeit
43 ns
Anstiegszeit
35 ns
Vgs-Gate-Source-Spannung
4.4 V
ID-Dauer-Drain-Strom
100 A
Vds-Drain-Source-Breakdown-Voltage
108 V
Vgs-th-Gate-Source-Threshold-Voltage
3 V
Rds-On-Drain-Source-Widerstand
8.5 mOhms
Transistor-Polarität
N-Kanal
Typische-Ausschaltverzögerungszeit
87 ns
Typische-Einschaltverzögerungszeit
20 ns
Qg-Gate-Ladung
111 nC
Kanal-Modus
Erweiterung
Tags
PSMN8R5-108, PSMN8R5-1, PSMN8R5, PSMN8, PSMN, PSM
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ark
MOSFET, N CH, 108V, 100A, TO-262-3
***nell
MOSFET, N CH, 108V, 100A, TO-262-3; Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:108V; On Resistance Rds(on):0.0064ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Pd:263W; Transistor Case Style:TO-226; No. of Pins:3Pins; Operating Temperature Max:175°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jan-2018); Operating Temperature Min:-55°C
Teil # Mfg. Beschreibung Aktie Preis
PSMN8R5-108ESQ
DISTI # 568-11432-5-ND
NXP SemiconductorsMOSFET N-CH 108V 100A I2PAK
RoHS: Compliant
Min Qty: 5000
Container: Tube
Limited Supply - Call
    PSMN8R5-108ES
    DISTI # 771-PSMN8R5-108ES
    NexperiaMOSFET N-Channel 100V 8.5mohm Fet
    RoHS: Compliant
    0
    • 5000:$1.1500
    PSMN8R5-108ESQ
    DISTI # 771-PSMN8R5-108ESQ
    NexperiaMOSFET PSMN8R5-108ES/I2PAK/STANDARD M
    RoHS: Compliant
    0
      PSMN8R5-108ESNXP SemiconductorsNow Nexperia PSMN8R5-108ES - Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
      RoHS: Not Compliant
      466
      • 1000:$0.8200
      • 500:$0.8600
      • 100:$0.8900
      • 25:$0.9300
      • 1:$1.0000
      PSMN8R5-108ES127NXP SemiconductorsNow Nexperia PSMN8R5-108ES - Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
      RoHS: Not Compliant
      167
      • 1000:$0.8200
      • 500:$0.8600
      • 100:$0.8900
      • 25:$0.9300
      • 1:$1.0000
      PSMN8R5-108ESQ127NXP SemiconductorsNow Nexperia PSMN8R5-108ESQ - Power Field-Effect Transistor, 100A I(D), 108V, 0.0085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA
      RoHS: Not Compliant
      330
      • 1000:$0.8200
      • 500:$0.8600
      • 100:$0.8900
      • 25:$0.9300
      • 1:$1.0000
      Bild Teil # Beschreibung
      PSMN8R2-80YS,115

      Mfr.#: PSMN8R2-80YS,115

      OMO.#: OMO-PSMN8R2-80YS-115

      MOSFET N-CH 80V 8.5 mOhm Standard MOSFET
      PSMN8R0-30YLC,115

      Mfr.#: PSMN8R0-30YLC,115

      OMO.#: OMO-PSMN8R0-30YLC-115-NXP-SEMICONDUCTORS

      MOSFET N-CH 30V 54A LL LFPAK
      PSMN8R0-80YLX

      Mfr.#: PSMN8R0-80YLX

      OMO.#: OMO-PSMN8R0-80YLX-NEXPERIA

      MOSFET N-CH 80V 100A LFPAK56
      PSMN8R0-40PS

      Mfr.#: PSMN8R0-40PS

      OMO.#: OMO-PSMN8R0-40PS-1190

      MOSFET Transistor, N Channel, 77 A, 40 V, 6.2 mohm, 10 V, 3 V RoHS Compliant: Yes
      PSMN8R0-40PS127

      Mfr.#: PSMN8R0-40PS127

      OMO.#: OMO-PSMN8R0-40PS127-1190

      Now Nexperia PSMN8R0-40PS - Power Field-Effect Transistor, 77A I(D), 40V, 0.0076ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
      PSMN8R5-100PSQ

      Mfr.#: PSMN8R5-100PSQ

      OMO.#: OMO-PSMN8R5-100PSQ-NEXPERIA

      IGBT Transistors MOSFET PSMN8R5-100PS/SIL3P/RAILH
      PSMN8R0-40BS,118

      Mfr.#: PSMN8R0-40BS,118

      OMO.#: OMO-PSMN8R0-40BS-118-NEXPERIA

      MOSFET N-CH 40V 77A D2PAK
      PSMN8R5-108ESQ127

      Mfr.#: PSMN8R5-108ESQ127

      OMO.#: OMO-PSMN8R5-108ESQ127-1190

      Now Nexperia PSMN8R5-108ESQ - Power Field-Effect Transistor, 100A I(D), 108V, 0.0085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA
      PSMN8R5-100PSFQ

      Mfr.#: PSMN8R5-100PSFQ

      OMO.#: OMO-PSMN8R5-100PSFQ-NEXPERIA

      MOSFET N-CH 100V 98A TO220AB
      PSMN8R9-100BSEJ

      Mfr.#: PSMN8R9-100BSEJ

      OMO.#: OMO-PSMN8R9-100BSEJ-NEXPERIA

      PSMN8R9-100BSE/SOT404/D2PAK
      Verfügbarkeit
      Aktie:
      Available
      Auf Bestellung:
      4000
      Menge eingeben:
      Der aktuelle Preis von PSMN8R5-108ES dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
      Referenzpreis (USD)
      Menge
      Stückpreis
      ext. Preis
      1
      1,23 $
      1,23 $
      10
      1,17 $
      11,68 $
      100
      1,11 $
      110,70 $
      500
      1,05 $
      522,75 $
      1000
      0,98 $
      984,00 $
      Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
      Beginnen mit
      Neueste Produkte
      Top