PSMN8R7-8

PSMN8R7-80BS,118 vs PSMN8R7-80PS,127

 
PartNumberPSMN8R7-80BS,118PSMN8R7-80PS,127
DescriptionMOSFET N-CH 80 V 8.7 MOHM MOSFETMOSFET N-CHAN 80V 64A
ManufacturerNexperiaNexperia
Product CategoryMOSFETMOSFET
RoHSEY
TechnologySiSi
Mounting StyleSMD/SMTThrough Hole
Package / CaseTO-263-3TO-220-3
Number of Channels1 Channel1 Channel
Transistor PolarityN-ChannelN-Channel
Vds Drain Source Breakdown Voltage73 V80 V
Id Continuous Drain Current90 A90 A
Rds On Drain Source Resistance14 mOhms8.7 mOhms
Vgs Gate Source Voltage4.6 V20 V
Pd Power Dissipation170 W170 W
ConfigurationSingleSingle
PackagingReelTube
Transistor Type1 N-Channel1 N-Channel
BrandNexperiaNexperia
Product TypeMOSFETMOSFET
Factory Pack Quantity80050
SubcategoryMOSFETsMOSFETs
Unit Weight0.139332 oz0.211644 oz
Minimum Operating Temperature-- 55 C
Maximum Operating Temperature-+ 175 C
Hersteller Teil # Beschreibung RFQ
Nexperia
Nexperia
PSMN8R7-80BS,118 MOSFET N-CH 80 V 8.7 MOHM MOSFET
PSMN8R7-80PS,127 MOSFET N-CHAN 80V 64A
PSMN8R7-80PS,127 MOSFET N-CH 80V TO220AB
PSMN8R7-80BS,118 RF Bipolar Transistors MOSFET N-CH 80 V 8.7 MOHM MOSFET
PSMN8R7-80PS MOSFET,N CHANNEL,80V,90A,TO-220AB, Transistor Polarity:N Channel, Continuous Drain Current Id:90A, Drain Source Voltage Vds:80V, On Resistance Rds(on):0.0075ohm, Rds(on) Test Voltage Vgs:10V, Th
PSMN8R7-80BS118 Now Nexperia PSMN8R7-80BS - Power Field-Effect Transistor, 90A I(D), 80V, 0.0087ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
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