PartNumber | R8002 | R800250R00FE70 | R8002ANJ |
Description | |||
Manufacturer | ROHM Semiconductor | - | - |
Product Category | Transistors - FETs, MOSFETs - Single | - | - |
Series | R8002ANX | - | - |
Packaging | Bulk | - | - |
Unit Weight | 0.211644 oz | - | - |
Mounting Style | Through Hole | - | - |
Package Case | TO-220-3 | - | - |
Technology | Si | - | - |
Number of Channels | 1 Channel | - | - |
Configuration | Single | - | - |
Transistor Type | 1 N-Channel | - | - |
Pd Power Dissipation | 35 W | - | - |
Fall Time | 70 ns | - | - |
Rise Time | 20 ns | - | - |
Vgs Gate Source Voltage | 30 V | - | - |
Id Continuous Drain Current | 2 A | - | - |
Vds Drain Source Breakdown Voltage | 800 V | - | - |
Rds On Drain Source Resistance | 4.3 Ohms | - | - |
Transistor Polarity | N-Channel | - | - |
Typical Turn Off Delay Time | 33 ns | - | - |
Typical Turn On Delay Time | 17 ns | - | - |
Qg Gate Charge | 12.7 nC | - | - |