RFD14N05S

RFD14N05SM vs RFD14N05SM9 vs RFD14N05SM96

 
PartNumberRFD14N05SMRFD14N05SM9RFD14N05SM96
DescriptionMOSFET TO-252AA N-Ch Power
ManufacturerON SemiconductorHARRIS-
Product CategoryMOSFETFETs - Single-
RoHSE--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseTO-252-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage50 V--
Id Continuous Drain Current14 A--
Rds On Drain Source Resistance100 mOhms--
Vgs Gate Source Voltage20 V--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 175 C--
Pd Power Dissipation48 W--
ConfigurationSingle--
Channel ModeEnhancement--
PackagingTube--
Height2.39 mm--
Length6.73 mm--
Transistor Type1 N-Channel--
Width6.22 mm--
BrandON Semiconductor / Fairchild--
Fall Time17 ns--
Product TypeMOSFET--
Rise Time26 ns--
Factory Pack Quantity75--
SubcategoryMOSFETs--
Typical Turn Off Delay Time45 ns--
Typical Turn On Delay Time14 ns--
Part # AliasesRFD14N05SM_NL--
Unit Weight0.139332 oz--
Hersteller Teil # Beschreibung RFQ
ON Semiconductor / Fairchild
ON Semiconductor / Fairchild
RFD14N05SM9A MOSFET TO-252
RFD14N05SM MOSFET TO-252AA N-Ch Power
RFD14N05SM9A-CUT TAPE Neu und Original
RFD14N05SM9 Neu und Original
RFD14N05SM96 Neu und Original
RFD14N05SM96156 Neu und Original
RFD14N05SM9A-NL Neu und Original
RFD14N05SM_NL Power Field-Effect Transistor, 14A I(D), 50V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
ON Semiconductor
ON Semiconductor
RFD14N05SM MOSFET N-CH 50V 14A TO-252AA
RFD14N05SM9A MOSFET N-CH 50V 14A DPAK
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