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| Teil # | Mfg. | Beschreibung | Aktie | Preis |
|---|---|---|---|---|
| RFD14N05SM DISTI # 512-RFD14N05SM | ON Semiconductor | MOSFET TO-252AA N-Ch Power RoHS: Compliant | 0 | |
| RFD14N05SM_NL | Fairchild Semiconductor Corporation | Power Field-Effect Transistor, 14A I(D), 50V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA RoHS: Not Compliant | 2135 |
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| Bild | Teil # | Beschreibung |
|---|---|---|
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Mfr.#: RFD14N05L8M9A OMO.#: OMO-RFD14N05L8M9A-1190 |
Neu und Original |
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Mfr.#: RFD14N05LM OMO.#: OMO-RFD14N05LM-1190 |
Neu und Original |
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Mfr.#: RFD14N05LSM-NL OMO.#: OMO-RFD14N05LSM-NL-1190 |
Neu und Original |
|
Mfr.#: RFD14N05SM |
MOSFET N-CH 50V 14A TO-252AA |
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Mfr.#: RFD14N05SM9 OMO.#: OMO-RFD14N05SM9-1190 |
Neu und Original |
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Mfr.#: RFD14N05SM96156 OMO.#: OMO-RFD14N05SM96156-1190 |
Neu und Original |
|
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Mfr.#: RFD14N05SM9A-NL OMO.#: OMO-RFD14N05SM9A-NL-1190 |
Neu und Original |
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Mfr.#: RFD14N05SM_NL OMO.#: OMO-RFD14N05SM-NL-1190 |
Power Field-Effect Transistor, 14A I(D), 50V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA |
|
|
Mfr.#: RFD14N06 OMO.#: OMO-RFD14N06-1190 |
Power Field-Effect Transistor, 14A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA |
|
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Mfr.#: RFD14N06LSM OMO.#: OMO-RFD14N06LSM-1190 |
Neu und Original |
