RN1

RN1106MFV,L3F vs RN1107(T5L,F,T) vs RN1106MFV(TPL3)

 
PartNumberRN1106MFV,L3FRN1107(T5L,F,T)RN1106MFV(TPL3)
DescriptionBipolar Transistors - Pre-Biased BRT NPN Single 100mA IC 50V VCEOBipolar Transistors - Pre-Biased BRT NPN Single 100mA IC 50V VCEOBipolar Transistors - Pre-Biased 100mA 50volts 3Pin 4.7K x 47Kohms
ManufacturerToshibaToshibaToshiba
Product CategoryBipolar Transistors - Pre-BiasedBipolar Transistors - Pre-BiasedBipolar Transistors - Pre-Biased
RoHSYYN
ConfigurationSingleSingleSingle
Transistor PolarityNPNNPNNPN
Typical Input Resistor4.7 kOhms10 kOhms4.7 kOhms
Typical Resistor Ratio0.10.2130.1
Mounting StyleSMD/SMTSMD/SMTSMD/SMT
Package / CaseSOT-723-3SOT-416-3-
DC Collector/Base Gain hfe Min808080
Maximum Operating Frequency---
Collector Emitter Voltage VCEO Max50 V50 V50 V
Continuous Collector Current100 mA100 mA100 mA
Peak DC Collector Current--100 mA
Pd Power Dissipation150 mW100 mW150 mW
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C-+ 150 C
SeriesRN1106MFVRN1107RN1106MFV
Emitter Base Voltage VEBO5 V6 V-
BrandToshibaToshibaToshiba
Channel ModeEnhancement--
Maximum DC Collector Current100 mA100 mA-
Product TypeBJTs - Bipolar Transistors - Pre-BiasedBJTs - Bipolar Transistors - Pre-BiasedBJTs - Bipolar Transistors - Pre-Biased
Factory Pack Quantity800030008000
SubcategoryTransistorsTransistorsTransistors
Packaging-ReelReel
Unit Weight-0.000212 oz-
DC Current Gain hFE Max--80
  • Beginnen mit
  • RN1 1899
Hersteller Teil # Beschreibung RFQ
Toshiba
Toshiba
RN1107,LF(CT Bipolar Transistors - Pre-Biased Bias Resistor Built-in transistor
RN1106MFV,L3F Bipolar Transistors - Pre-Biased BRT NPN Single 100mA IC 50V VCEO
RN1107(T5L,F,T) Bipolar Transistors - Pre-Biased BRT NPN Single 100mA IC 50V VCEO
RN1106MFV(TPL3) Bipolar Transistors - Pre-Biased 100mA 50volts 3Pin 4.7K x 47Kohms
RN1107,LF(CT Bipolar Transistors - Pre-Biased Bias Resistor Built-in transisto
RN1107(T5L,F,T) Bipolar Transistors - Pre-Biased BRT NPN Single 100mA IC 50V VCEO
RN1106MFV(TPL3) Bipolar Transistors - Pre-Biased 100mA 50volts 3Pin 4.7K x 47Kohms
RN1106MFV(TL3,T) Bipolar Transistors - Pre-Biased BRT NPN Single 100mA IC 50V VCEO
RN1106FS(TPL3) Bipolar Transistors - Pre-Biased 50mA 20volts 3Pin 4.7K x 47Kohms
RN1106CT Neu und Original
RN1107CT Neu und Original
RN1107LF Neu und Original
RN1106MFVL3XGF Neu und Original
RN1106ACT(TPL3)CT-ND Neu und Original
RN1106ACT(TPL3)DKR-ND Neu und Original
RN1106ACT(TPL3)TR-ND Neu und Original
RN1106CT(TPL3)CT-ND Neu und Original
RN1106CT(TPL3)DKR-ND Neu und Original
RN1106CT(TPL3)TR-ND Neu und Original
RN1106LF(CTCT-ND Neu und Original
RN1106LF(CTDKR-ND Neu und Original
RN1106LF(CTTR-ND Neu und Original
RN1106MFV(TL3T)CT-ND Neu und Original
RN1106MFV(TL3T)DKR-ND Neu und Original
RN1106MFV(TL3T)TR-ND Neu und Original
RN1106MFVL3FCT-ND Neu und Original
RN1106MFVL3FDKR-ND Neu und Original
RN1106MFVL3FTR-ND Neu und Original
RN1107ACT(TPL3)CT-ND Neu und Original
RN1107ACT(TPL3)DKR-ND Neu und Original
RN1107ACT(TPL3)TR-ND Neu und Original
RN1107CT(TPL3)CT-ND Neu und Original
RN1107CT(TPL3)DKR-ND Neu und Original
RN1107CT(TPL3)TR-ND Neu und Original
RN1107LF(CTCT-ND Neu und Original
RN1107LF(CTDKR-ND Neu und Original
RN1107LF(CT Bipolar Transistors - Pre-Biased SMALL SIGNAL TRAN 100MW /1MHZ
RN1106LF(CT Bipolar Transistors - Pre-Biased SSM PLN (LF) TRAN 100MW /250M
RN1107(TE85L) Neu und Original
RN1107(TE85L,F) Trans Digital BJT NPN 50V 100mA 3-Pin SSM T/R
RN1106FS(TPL3 ) Neu und Original
RN1106MFV Neu und Original
RN1106MFV(TL3T) Neu und Original
RN1106MFV,L3F(T Neu und Original
RN1107 Neu und Original
RN1107 TE85L.F Neu und Original
RN1107ACT Neu und Original
RN1107FS Neu und Original
RN1107FT Neu und Original
RN1107FV Neu und Original
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