 |  | | |
| PartNumber | RN1105MFV,L3F | RN1105MFV,L3FCT-ND | RN1105MFV,L3F(T |
| Description | Bipolar Transistors - Pre-Biased VESM PLN TRANSISTOR Pd 150mW F 1MHz | ||
| Manufacturer | Toshiba | - | - |
| Product Category | Bipolar Transistors - Pre-Biased | - | - |
| RoHS | Y | - | - |
| Configuration | Single | - | - |
| Transistor Polarity | NPN | - | - |
| Typical Input Resistor | 2.2 kOhms | - | - |
| Typical Resistor Ratio | 0.0468 | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | SOT-723-3 | - | - |
| DC Collector/Base Gain hfe Min | 80 | - | - |
| Collector Emitter Voltage VCEO Max | 50 V | - | - |
| Continuous Collector Current | 100 mA | - | - |
| Peak DC Collector Current | 100 mA | - | - |
| Pd Power Dissipation | 150 mW | - | - |
| Series | RN1105 | - | - |
| Packaging | Reel | - | - |
| Collector Base Voltage VCBO | 50 V | - | - |
| Emitter Base Voltage VEBO | 5 V | - | - |
| Height | 0.5 mm | - | - |
| Length | 1.2 mm | - | - |
| Type | NPN Epitaxial Silicon Transistor | - | - |
| Width | 0.8 mm | - | - |
| Brand | Toshiba | - | - |
| Maximum DC Collector Current | 100 mA | - | - |
| Product Type | BJTs - Bipolar Transistors - Pre-Biased | - | - |
| Factory Pack Quantity | 8000 | - | - |
| Subcategory | Transistors | - | - |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
Toshiba |
RN1105MFV,L3F | Bipolar Transistors - Pre-Biased VESM PLN TRANSISTOR Pd 150mW F 1MHz | |
| RN1105MFV,L3F | Bipolar Transistors - Pre-Biased VESM PLN TRANSISTOR Pd 150mW F 1MHz | ||
| RN1105MFV,L3FCT-ND | Neu und Original | ||
| RN1105MFV,L3FDKR-ND | Neu und Original | ||
| RN1105MFV,L3FTR-ND | Neu und Original | ||
| RN1105MFV,L3F(T | Neu und Original |