PartNumber | RN1131MFV(TL3,T) | RN1131MFV | RN1131MFV(TL3T) |
Description | Bipolar Transistors - Pre-Biased BRT NPN Single 100mA IC 50V VCEO | ||
Manufacturer | Toshiba | TOSHIBA | - |
Product Category | Bipolar Transistors - Pre-Biased | Transistors (BJT) - Single, Pre-Biased | - |
RoHS | Y | - | - |
Configuration | Single | - | - |
Transistor Polarity | NPN | - | - |
Typical Input Resistor | 100 kOhms | - | - |
Mounting Style | SMD/SMT | - | - |
Package / Case | SOT-723 | - | - |
DC Collector/Base Gain hfe Min | 120 | - | - |
Collector Emitter Voltage VCEO Max | 50 V | - | - |
Continuous Collector Current | 100 mA | - | - |
Pd Power Dissipation | 150 mW | - | - |
Series | RN1131MFV | - | - |
Packaging | Reel | - | - |
Emitter Base Voltage VEBO | 5 V | - | - |
Brand | Toshiba | - | - |
Maximum DC Collector Current | 100 mA | - | - |
Product Type | BJTs - Bipolar Transistors - Pre-Biased | - | - |
Factory Pack Quantity | 8000 | - | - |
Subcategory | Transistors | - | - |