PartNumber | RN1131MFV(TL3,T) | RN1131MFV(TPL3) |
Description | Bipolar Transistors - Pre-Biased BRT NPN Single 100mA IC 50V VCEO | Bipolar Transistors - Pre-Biased 50volts 100mA 3Pin 100Kohms x 0ohms |
Manufacturer | Toshiba | Toshiba |
Product Category | Bipolar Transistors - Pre-Biased | Bipolar Transistors - Pre-Biased |
RoHS | Y | N |
Configuration | Single | Single |
Transistor Polarity | NPN | NPN |
Typical Input Resistor | 100 kOhms | 100 kOhms |
Mounting Style | SMD/SMT | SMD/SMT |
Package / Case | SOT-723 | VESM-3 |
DC Collector/Base Gain hfe Min | 120 | 120 |
Collector Emitter Voltage VCEO Max | 50 V | 50 V |
Continuous Collector Current | 100 mA | 100 mA |
Pd Power Dissipation | 150 mW | 150 mW |
Series | RN1131MFV | RN1131MFV |
Packaging | Reel | Reel |
Emitter Base Voltage VEBO | 5 V | 5 V |
Brand | Toshiba | Toshiba |
Maximum DC Collector Current | 100 mA | - |
Product Type | BJTs - Bipolar Transistors - Pre-Biased | BJTs - Bipolar Transistors - Pre-Biased |
Factory Pack Quantity | 8000 | 8000 |
Subcategory | Transistors | Transistors |
Peak DC Collector Current | - | 100 mA |
Minimum Operating Temperature | - | - 65 C |
Maximum Operating Temperature | - | + 150 C |
Collector Base Voltage VCBO | - | 50 V |
DC Current Gain hFE Max | - | 700 |
Height | - | 0.5 mm |
Length | - | 1.2 mm |
Operating Temperature Range | - | - 65 C to + 150 C |
Type | - | NPN Epitaxial Silicon Transistor |
Width | - | 0.8 mm |