RN1131MFV(T

RN1131MFV(TL3,T) vs RN1131MFV(TPL3)

 
PartNumberRN1131MFV(TL3,T)RN1131MFV(TPL3)
DescriptionBipolar Transistors - Pre-Biased BRT NPN Single 100mA IC 50V VCEOBipolar Transistors - Pre-Biased 50volts 100mA 3Pin 100Kohms x 0ohms
ManufacturerToshibaToshiba
Product CategoryBipolar Transistors - Pre-BiasedBipolar Transistors - Pre-Biased
RoHSYN
ConfigurationSingleSingle
Transistor PolarityNPNNPN
Typical Input Resistor100 kOhms100 kOhms
Mounting StyleSMD/SMTSMD/SMT
Package / CaseSOT-723VESM-3
DC Collector/Base Gain hfe Min120120
Collector Emitter Voltage VCEO Max50 V50 V
Continuous Collector Current100 mA100 mA
Pd Power Dissipation150 mW150 mW
SeriesRN1131MFVRN1131MFV
PackagingReelReel
Emitter Base Voltage VEBO5 V5 V
BrandToshibaToshiba
Maximum DC Collector Current100 mA-
Product TypeBJTs - Bipolar Transistors - Pre-BiasedBJTs - Bipolar Transistors - Pre-Biased
Factory Pack Quantity80008000
SubcategoryTransistorsTransistors
Peak DC Collector Current-100 mA
Minimum Operating Temperature-- 65 C
Maximum Operating Temperature-+ 150 C
Collector Base Voltage VCBO-50 V
DC Current Gain hFE Max-700
Height-0.5 mm
Length-1.2 mm
Operating Temperature Range-- 65 C to + 150 C
Type-NPN Epitaxial Silicon Transistor
Width-0.8 mm
Hersteller Teil # Beschreibung RFQ
Toshiba
Toshiba
RN1131MFV(TL3,T) Bipolar Transistors - Pre-Biased BRT NPN Single 100mA IC 50V VCEO
RN1131MFV(TPL3) Bipolar Transistors - Pre-Biased 50volts 100mA 3Pin 100Kohms x 0ohms
RN1131MFV(TL3,T) Bipolar Transistors - Pre-Biased BRT NPN Single 100mA IC 50V VCEO
RN1131MFV(TPL3) Bipolar Transistors - Pre-Biased 50volts 100mA 3Pin 100Kohms x 0ohms
RN1131MFV(TL3T)CT-ND Neu und Original
RN1131MFV(TL3T)DKR-ND Neu und Original
RN1131MFV(TL3T)TR-ND Neu und Original
RN1131MFV(TL3T) Neu und Original
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