RN1965F

RN1965FE(TE85L,F) vs RN1965FE vs RN1965FE(TE85LF)CT-ND

 
PartNumberRN1965FE(TE85L,F)RN1965FERN1965FE(TE85LF)CT-ND
DescriptionBipolar Transistors - Pre-Biased BRT NPN 2-in-1 100mA 50V
ManufacturerToshiba--
Product CategoryBipolar Transistors - Pre-Biased--
RoHSY--
ConfigurationDual--
Transistor PolarityNPN--
Typical Input Resistor2.2 kOhms--
Typical Resistor Ratio0.0468--
Mounting StyleSMD/SMT--
Package / CaseSOT-563--
DC Collector/Base Gain hfe Min80--
Collector Emitter Voltage VCEO Max50 V--
Continuous Collector Current100 mA--
Pd Power Dissipation100 mW--
SeriesRN1965--
PackagingReel--
Emitter Base Voltage VEBO5 V--
BrandToshiba--
Maximum DC Collector Current100 mA--
Product TypeBJTs - Bipolar Transistors - Pre-Biased--
Factory Pack Quantity4000--
SubcategoryTransistors--
Unit Weight0.000106 oz--
Hersteller Teil # Beschreibung RFQ
Toshiba
Toshiba
RN1965FE(TE85L,F) Bipolar Transistors - Pre-Biased BRT NPN 2-in-1 100mA 50V
RN1965FS(TPL3) Bipolar Transistors - Pre-Biased 2.2K x 47Kohms Polarity=NPNx2
RN1965FE(TE85L,F) Bipolar Transistors - Pre-Biased BRT NPN 2-in-1 100mA 50V
RN1965FE Neu und Original
RN1965FE(TE85LF)CT-ND Neu und Original
RN1965FE(TE85LF)DKR-ND Neu und Original
RN1965FE(TE85LF)TR-ND Neu und Original
Top