RN2711(T

RN2711(TE85L,F) vs RN2711(TE85LF)CT-ND vs RN2711(TE85LF)DKR-ND

 
PartNumberRN2711(TE85L,F)RN2711(TE85LF)CT-NDRN2711(TE85LF)DKR-ND
DescriptionBipolar Transistors - Pre-Biased BRT PNP 2-in-1 Ic -100mA -50V VCEO
ManufacturerToshiba--
Product CategoryBipolar Transistors - Pre-Biased--
RoHSY--
ConfigurationDual--
Transistor PolarityPNP--
Typical Input Resistor10 kOhms--
Mounting StyleSMD/SMT--
Package / CaseSOT-353-5--
DC Collector/Base Gain hfe Min120--
Collector Emitter Voltage VCEO Max- 50 V--
Continuous Collector Current- 100 mA--
Pd Power Dissipation200 mW--
SeriesRN2711--
PackagingReel--
Emitter Base Voltage VEBO- 5 V--
BrandToshiba--
Maximum DC Collector Current- 100 mA--
Product TypeBJTs - Bipolar Transistors - Pre-Biased--
Factory Pack Quantity3000--
SubcategoryTransistors--
Unit Weight0.000212 oz--
Hersteller Teil # Beschreibung RFQ
Toshiba
Toshiba
RN2711(TE85L,F) Bipolar Transistors - Pre-Biased BRT PNP 2-in-1 Ic -100mA -50V VCEO
RN2711(TE85L,F) Bipolar Transistors - Pre-Biased BRT PNP 2-in-1 Ic -100mA -50V VCEO
RN2711(TE85LF)CT-ND Neu und Original
RN2711(TE85LF)DKR-ND Neu und Original
RN2711(TE85LF)TR-ND Neu und Original
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