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| PartNumber | RS1E321GNTB1 | RS1E320GNTB | RS1E320GN |
| Description | MOSFET NCH 30V 80A POWER | MOSFET 4.5V Drive Nch MOSFET | |
| Manufacturer | ROHM Semiconductor | ROHM Semiconductor | ROHM Semiconductor |
| Product Category | MOSFET | MOSFET | Transistors - FETs, MOSFETs - Single |
| RoHS | Y | Y | - |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | HSOP-8 | HSOP-8 | - |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 30 V | 30 V | - |
| Id Continuous Drain Current | 80 A | 32 A | - |
| Rds On Drain Source Resistance | 2.1 mOhms | 1.9 mOhms | - |
| Vgs th Gate Source Threshold Voltage | 1.2 V | 2.5 V | - |
| Vgs Gate Source Voltage | 20 V | 20 V | - |
| Qg Gate Charge | 42.8 nC | 42.8 nC | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
| Pd Power Dissipation | 34 W | 3 W | - |
| Configuration | Single | Single | Single |
| Channel Mode | Enhancement | - | - |
| Packaging | Reel | Reel | Reel |
| Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
| Brand | ROHM Semiconductor | ROHM Semiconductor | - |
| Fall Time | 28.5 ns | 28.5 ns | 28.5 ns |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 15.6 ns | 15.6 ns | 15.6 ns |
| Factory Pack Quantity | 2500 | 2500 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 74.6 ns | 74.6 ns | 74.6 ns |
| Typical Turn On Delay Time | 21.8 ns | 21.8 ns | 21.8 ns |
| Forward Transconductance Min | - | 35 S | - |
| Part # Aliases | - | RS1E320GN | - |
| Unit Weight | - | 0.002490 oz | 0.002490 oz |
| Series | - | - | RS1E320GN |
| Package Case | - | - | HSOP-8 |
| Pd Power Dissipation | - | - | 3 W |
| Vgs Gate Source Voltage | - | - | 20 V |
| Id Continuous Drain Current | - | - | 32 A |
| Vds Drain Source Breakdown Voltage | - | - | 30 V |
| Vgs th Gate Source Threshold Voltage | - | - | 2.5 V |
| Rds On Drain Source Resistance | - | - | 1.9 mOhms |
| Qg Gate Charge | - | - | 42.8 nC |
| Forward Transconductance Min | - | - | 35 S |