RT1E

RT1E040RPTR vs RT1E040RP vs RT1E040RPTL

 
PartNumberRT1E040RPTRRT1E040RPRT1E040RPTL
DescriptionMOSFET 4V Drive Pch MOSFET Drive Pch
ManufacturerROHM Semiconductor--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseTSST-8--
Number of Channels1 Channel--
Transistor PolarityP-Channel--
Vds Drain Source Breakdown Voltage30 V--
Id Continuous Drain Current4 A--
Rds On Drain Source Resistance32 mOhms--
Vgs th Gate Source Threshold Voltage2.5 V--
Vgs Gate Source Voltage20 V--
Qg Gate Charge20 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation1.25 W--
ConfigurationSingle--
Channel ModeEnhancement--
PackagingReel--
SeriesRT1E040RP--
Transistor Type1 P-Channel--
BrandROHM Semiconductor--
Forward Transconductance Min2.7 S--
Fall Time45 ns--
Product TypeMOSFET--
Rise Time30 ns--
Factory Pack Quantity3000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time85 ns--
Typical Turn On Delay Time15 ns--
Part # AliasesRT1E040RP--
Hersteller Teil # Beschreibung RFQ
RT1E050RPTR MOSFET 4V Drive Pch MOSFET Drive Pch
RT1E040RPTR MOSFET 4V Drive Pch MOSFET Drive Pch
RT1E040RP Neu und Original
RT1E040RPTL Neu und Original
RT1E040RPTR MOSFET P-CH 30V 4A TSST8
RT1E050RP Neu und Original
RT1E050RPTL Neu und Original
RT1E050RPTR MOSFET P-CH 30V 5A TSST8
RT1E060XN Neu und Original
RT1E060XN TCR Neu und Original
RT1E060XNTCR Neu und Original
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