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SEMIX1

SEMIX101GD066HDS vs SEMIX101GD126HDS vs SEMIX101GD128DC

 
PartNumberSEMIX101GD066HDSSEMIX101GD126HDSSEMIX101GD128DC
DescriptionIGBT MODULE, SIX, 1.2KV, 129A, Transistor Polarity:Six NPN, DC Collector Current:129A, Collector Emitter Saturation Voltage Vce(on):1.7V, Power Dissipation Pd:-, Collector Emitter Voltage V(br)ce
Hersteller Teil # Beschreibung RFQ
SEMIX101GD066HDS Neu und Original
SEMIX101GD126HDS IGBT MODULE, SIX, 1.2KV, 129A, Transistor Polarity:Six NPN, DC Collector Current:129A, Collector Emitter Saturation Voltage Vce(on):1.7V, Power Dissipation Pd:-, Collector Emitter Voltage V(br)ce
SEMIX101GD128DC Neu und Original
SEMIX101GD128DS Neu und Original
SEMIX101GD12E4S Neu und Original
SEMIX101GD12T4S Neu und Original
SEMIX151GB12E4V4 Neu und Original
SEMIX151GB12T4S Insulated Gate Bipolar Transistor, 230A I(C), 1200V V(BR)CES, N-Channel
SEMIX151GD126HDS SEMIX, Trench IGBT Module, 1200V, 100A
SEMIX151GD128DS Neu und Original
SEMIX151GD12E4S IGBT MODULE, SIX, 1.2KV, 232A, Transistor Polarity:Six NPN, DC Collector Current:232A, Collector Emitter Saturation Voltage Vce(on):1.8V, Power Dissipation Pd:-, Collector Emitter Voltage V(br)ce
SEMIX171KH16S RECTIFIER/THYRISTOR DIODE MODULE, 1600V, SEMIX
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