 | | | |
| PartNumber | SEMIX201GD128DS | SEMIX202GB066HD | SEMIX202GB066HDS |
| Description | IGBT MODULE, DUAL, 600V, 275A, Transistor Polarity:Dual NPN, DC Collector Current:275A, Collector Emitter Saturation Voltage Vce(on):1.45V, Power Dissipation Pd:45W, Collector Emitter Voltage V(b |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
| SEMIX201GD128DS | Neu und Original | ||
| SEMIX202GB066HD | Neu und Original | ||
| SEMIX202GB066HDS | IGBT MODULE, DUAL, 600V, 275A, Transistor Polarity:Dual NPN, DC Collector Current:275A, Collector Emitter Saturation Voltage Vce(on):1.45V, Power Dissipation Pd:45W, Collector Emitter Voltage V(b | ||
| SEMIX202GB128D | Neu und Original | ||
| SEMIX202GB128DS | Neu und Original | ||
| SEMIX202GB12E4S | Neu und Original | ||
| SEMIX202GB12T4S | Neu und Original | ||
| SEMIX202GB12V4S | Neu und Original | ||
| SEMIX202GB12VS | IGBT, MODULE, 1.2KV, 310A, Transistor Polarity:Dual NPN, DC Collector Current:310A, Collector Emitter Saturation Voltage Vce(on):1.75V, Power Dissipation Pd:-, Collector Emitter Voltage V(br)ceo: | ||
| SEMIX223GD12E4C | Neu und Original | ||
| SEMIX241DH16S | THYRISTOR DIODE MODULE 300A, 1.6KV, SCR Module Type:Bridge Rectifier, Three Phase - SCR / Diode, Peak Repetitive Off-State Voltage, Vdrm:1.6kV, Gate Trigger Current Max, Igt:150mA, Current It av:2 | ||
| SEMIX241MD008S | Neu und Original | ||
| SEMIX251GD126HDS | IGBT, 1200 V, 250 A @ 25 DegC, 260 A @ 80 DegC, 1.7 V @ 25 degC | ||
| SEMIX252GB126HD | Neu und Original | ||
| SEMIX252GB126HDS | IGBT MODULE, DUAL, 1.2KV, 242A, Transistor Polarity:Dual NPN, DC Collector Current:242A, Collector Emitter Saturation Voltage Vce(on):1.7V, Power Dissipation Pd:-, Collector Emitter Voltage V(br) | ||
| SEMIX253GB126HD | Neu und Original | ||
| SEMIX253GD126HDC | Neu und Original | ||
| SEMIX291D16S | Neu und Original |
