 |  | | |
| PartNumber | SI1917EDH-T1 | SI1917EDH-T1-E3 | SI1917EDH-T1-E3 (PB) |
| Description | MOSFET RECOMMENDED ALT 781-SI1965DH-T1-GE3 | MOSFET 2P-CH 12V 1A SC70-6 | |
| Manufacturer | - | Vishay Siliconix | - |
| Product Category | - | FETs - Arrays | - |
| Series | - | TrenchFETR | - |
| Packaging | - | Digi-ReelR | - |
| Package Case | - | 6-TSSOP, SC-88, SOT-363 | - |
| Operating Temperature | - | -55°C ~ 150°C (TJ) | - |
| Mounting Type | - | Surface Mount | - |
| Supplier Device Package | - | SC-70-6 (SOT-363) | - |
| FET Type | - | 2 P-Channel (Dual) | - |
| Power Max | - | 570mW | - |
| Drain to Source Voltage Vdss | - | 12V | - |
| Input Capacitance Ciss Vds | - | - | - |
| FET Feature | - | Logic Level Gate | - |
| Current Continuous Drain Id 25°C | - | 1A | - |
| Rds On Max Id Vgs | - | 370 mOhm @ 1A, 4.5V | - |
| Vgs th Max Id | - | 450mV @ 100μA (Min) | - |
| Gate Charge Qg Vgs | - | 2nC @ 4.5V | - |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
| SI1917EDH-T1 | MOSFET RECOMMENDED ALT 781-SI1965DH-T1-GE3 | ||
| SI1917EDH-T1-E3 (PB) | Neu und Original | ||
| SI1917EDH-T1-GE3 | Neu und Original | ||
Vishay |
SI1917EDH-T1-E3 | MOSFET 2P-CH 12V 1A SC70-6 |