SI2315

SI2315BDS-T1-E3 vs SI2315 vs SI2315(ESD)

 
PartNumberSI2315BDS-T1-E3SI2315SI2315(ESD)
DescriptionMOSFET 1.8V 3.2A 1.25W
ManufacturerVishayVIS/-
Product CategoryMOSFETFETs - Single-
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseSOT-23-3--
Number of Channels1 Channel--
Transistor PolarityP-Channel--
Vds Drain Source Breakdown Voltage12 V--
Id Continuous Drain Current3 A--
Rds On Drain Source Resistance50 mOhms--
Vgs th Gate Source Threshold Voltage450 mV--
Vgs Gate Source Voltage4.5 V--
Qg Gate Charge8 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation0.75 W--
ConfigurationSingle--
Channel ModeEnhancement--
TradenameTrenchFET--
PackagingReel--
SeriesSI2--
Transistor Type1 P-Channel--
BrandVishay / Siliconix--
Forward Transconductance Min7 S--
Fall Time50 ns--
Product TypeMOSFET--
Rise Time35 ns--
Factory Pack Quantity3000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time50 ns--
Typical Turn On Delay Time15 ns--
Part # AliasesSI2315BDS-E3--
Unit Weight0.000282 oz--
Hersteller Teil # Beschreibung RFQ
Vishay / Siliconix
Vishay / Siliconix
SI2315BDS-T1-E3 MOSFET 1.8V 3.2A 1.25W
SI2315BDS-T1-GE3 MOSFET 12V 3.85A 1.19W 50mohm @ 4.5V
SI2315 Neu und Original
SI2315(ESD) Neu und Original
SI2315BDST1 Small Signal Field-Effect Transistor, 3A I(D), 12V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB
SI2315DS 3.5 A, 12 V, 0.055 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-236
SI2315DS-T1 MOSFET RECOMMENDED ALT 781-SI2315BDS-E3
SI2315DS-T1 , MAX3243CUI Neu und Original
SI2315DS-T1 , MAX3243CUI+T Neu und Original
SI2315DS-T1-E3 MOSFET RECOMMENDED ALT 781-SI2315BDS-E3
SI2315DS-T1-GE3 Neu und Original
SI2315DS-T1/C5RAB Neu und Original
SI2315DS-TI Neu und Original
SI2315BDS-T1-E3-CUT TAPE Neu und Original
Vishay
Vishay
SI2315BDS-T1-E3 MOSFET P-CH 12V 3A SOT23-3
SI2315BDS-T1-GE3 MOSFET P-CH 12V 3A SOT23-3
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