SI2315BDS-T1-E3

SI2315BDS-T1-E3
Mfr. #:
SI2315BDS-T1-E3
Hersteller:
Vishay / Siliconix
Beschreibung:
MOSFET 1.8V 3.2A 1.25W
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
SI2315BDS-T1-E3 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SI2315BDS-T1-E3 DatasheetSI2315BDS-T1-E3 Datasheet (P4-P6)SI2315BDS-T1-E3 Datasheet (P7-P9)
ECAD Model:
Mehr Informationen:
SI2315BDS-T1-E3 Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
Vishay
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
SOT-23-3
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
P-Kanal
Vds - Drain-Source-Durchbruchspannung:
12 V
Id - Kontinuierlicher Drainstrom:
3 A
Rds On - Drain-Source-Widerstand:
50 mOhms
Vgs th - Gate-Source-Schwellenspannung:
450 mV
Vgs - Gate-Source-Spannung:
4.5 V
Qg - Gate-Ladung:
8 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
0.75 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Handelsname:
TrenchFET
Verpackung:
Spule
Serie:
SI2
Transistortyp:
1 P-Channel
Marke:
Vishay / Siliconix
Vorwärtstranskonduktanz - Min:
7 S
Abfallzeit:
50 ns
Produktart:
MOSFET
Anstiegszeit:
35 ns
Werkspackungsmenge:
3000
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
50 ns
Typische Einschaltverzögerungszeit:
15 ns
Teil # Aliase:
SI2315BDS-E3
Gewichtseinheit:
0.000282 oz
Tags
SI2315BDS-T, SI2315B, SI2315, SI231, SI23, SI2
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single P-Channel 12 V 0.05 Ohms Surface Mount Power Mosfet - SOT-23
***ied Electronics & Automation
MOSFET; Power; P-Channel; -12 V; 8 V; 3.5 A; 1.25 W; -55 to 150 degC
***ical
Trans MOSFET P-CH 12V 3A 3-Pin SOT-23 T/R
***et Europe
Trans MOSFET P-CH 12V 3A 3-Pin TO-236 T/R
***i-Key
MOSFET P-CH 12V 3A SOT23-3
***ark
For New Designs Use Si2333Cds-T1-Ge3 Rohs Compliant: No
***ronik
P-CHANNEL-FET 3,85A 12V SOT23 RoHSconf
***Components
MOSFET P-Channel 12V 3A TO236
***ser
P-Channel MOSFETs 1.8V 3.2A 1.25W
***eco
P-CHANNEL 1.25-W, 1.8-V (G-S) MOSFE<AZ
***rt123
SOT-23 (TO-236)
*** Electronics
RoHsTRANSISTOR MOSF
***
12V, 50 [email protected]
***ment14 APAC
MOSFET, P, SOT-23; Transistor Polarity:P Channel; Continuous Drain Current Id:-3.85A; Drain Source Voltage Vds:-12V; On Resistance Rds(on):50mohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs Typ:-900mV; Power Dissipation Pd:770mW; Transistor Case Style:SOT-23; No. of Pins:3; Current Id Max:-3A; Package / Case:SOT-23; Termination Type:SMD; Voltage Vds Typ:-12V; Voltage Vgs Max:8V; Voltage Vgs Rds on Measurement:-4.5V
***nell
MOSFET, P REEL 3K; Transistor Type:MOSFET; Transistor Polarity:P; Voltage, Vds Typ:-12V; Current, Id Cont:3A; Resistance, Rds On:0.05ohm; Voltage, Vgs Rds on Measurement:4.5V; Voltage, Vgs th Typ:-0.9V; Case Style:SOT-23; Termination Type:SMD; Current, Id Max:3.0A; Current, Idm Pulse:12A; No. of Pins:3; Power Dissipation:0.75W; Power Output:0.75W; Power, Pd:0.75W; Power, Ptot:0.75W; Quantity, Reel:3000; Resistance, Rds on @ Vgs = 2.5V P Channel:0.065ohm; Resistance, Rds on @ Vgs = 4.5V P Channel:0.05ohm; Resistance, Rds on Max:0.05ohm; SMD Marking:M5; Temperature, Current:25°C; Temperature, Full Power Rating:25°C; Voltage, Rds Measurement:4.5V; Voltage, Vds:12V; Voltage, Vds Max:12V; Voltage, Vgs th Max:-0.9V; Voltage, Vgs th Min:-0.45V; Width, Tape:8mm
SI2 Series TrenchFET® Power MOSFETs
Vishay SI2 Series TrenchFET® Power MOSFETs are N-channel MOSFETs designed with 30V V(ds) and are 100% tested gate resistance(Rg). These MOSFETs have gate resistance tested for 1MHz frequency with 0.2Ω to 1.4Ω. These SI2 series MOSFETs operate from -55ºC to 150ºC junction and storage temperature. The SI2 series are ideal for DC/DC converter, Load switch, and power management.
Teil # Mfg. Beschreibung Aktie Preis
SI2315BDS-T1-E3
DISTI # V72:2272_09216796
Vishay IntertechnologiesTrans MOSFET P-CH 12V 3A 3-Pin SOT-23 T/R
RoHS: Compliant
4686
  • 3000:$0.2302
  • 1000:$0.2370
  • 500:$0.2439
  • 250:$0.2507
  • 100:$0.2785
  • 25:$0.3685
  • 10:$0.4093
  • 1:$0.4808
SI2315BDS-T1-E3
DISTI # V36:1790_09216796
Vishay IntertechnologiesTrans MOSFET P-CH 12V 3A 3-Pin SOT-23 T/R
RoHS: Compliant
0
  • 3000:$0.2318
SI2315BDS-T1-E3
DISTI # SI2315BDS-T1-E3CT-ND
Vishay SiliconixMOSFET P-CH 12V 3A SOT23-3
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
155684In Stock
  • 1000:$0.1695
  • 500:$0.2194
  • 100:$0.2792
  • 10:$0.3740
  • 1:$0.4400
SI2315BDS-T1-E3
DISTI # SI2315BDS-T1-E3DKR-ND
Vishay SiliconixMOSFET P-CH 12V 3A SOT23-3
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
155684In Stock
  • 1000:$0.1695
  • 500:$0.2194
  • 100:$0.2792
  • 10:$0.3740
  • 1:$0.4400
SI2315BDS-T1-E3
DISTI # SI2315BDS-T1-E3TR-ND
Vishay SiliconixMOSFET P-CH 12V 3A SOT23-3
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)
153000In Stock
  • 75000:$0.1226
  • 30000:$0.1239
  • 15000:$0.1307
  • 6000:$0.1404
  • 3000:$0.1501
SI2315BDS-T1-E3
DISTI # 32370918
Vishay IntertechnologiesTrans MOSFET P-CH 12V 3A 3-Pin SOT-23 T/R
RoHS: Compliant
45000
  • 3000:$0.1938
SI2315BDS-T1-E3
DISTI # 26962753
Vishay IntertechnologiesTrans MOSFET P-CH 12V 3A 3-Pin SOT-23 T/R
RoHS: Compliant
4686
  • 27:$0.4808
SI2315BDS-T1-E3
DISTI # 24135652
Vishay IntertechnologiesTrans MOSFET P-CH 12V 3A 3-Pin SOT-23 T/R
RoHS: Compliant
1105
  • 265:$0.2908
SI2315BDS-T1-E3
DISTI # SI2315BDS-T1-E3
Vishay IntertechnologiesTrans MOSFET P-CH 12V 3A 3-Pin TO-236 T/R - Tape and Reel (Alt: SI2315BDS-T1-E3)
RoHS: Not Compliant
Min Qty: 3000
Container: Reel
Americas - 6000
  • 30000:$0.1354
  • 18000:$0.1391
  • 12000:$0.1431
  • 6000:$0.1492
  • 3000:$0.1537
SI2315BDS-T1-E3
DISTI # SI2315BDS-T1-E3
Vishay IntertechnologiesTrans MOSFET P-CH 12V 3A 3-Pin TO-236 T/R (Alt: SI2315BDS-T1-E3)
RoHS: Compliant
Min Qty: 3000
Container: Tape and Reel
Europe - 6000
  • 30000:€0.1749
  • 18000:€0.1879
  • 12000:€0.2029
  • 6000:€0.2359
  • 3000:€0.3469
SI2315BDS-T1-E3
DISTI # SI2315BDS-T1-E3
Vishay IntertechnologiesTrans MOSFET P-CH 12V 3A 3-Pin TO-236 T/R (Alt: SI2315BDS-T1-E3)
RoHS: Compliant
Min Qty: 3000
Container: Tape and Reel
Asia - 0
    SI2315BDS-T1-E3
    DISTI # 06J7577
    Vishay IntertechnologiesTrans MOSFET P-CH 12V 3A 3-Pin TO-236 T/R - Product that comes on tape, but is not reeled (Alt: 06J7577)
    RoHS: Not Compliant
    Min Qty: 1
    Container: Ammo Pack
    Americas - 0
    • 1000:$0.3400
    • 500:$0.4250
    • 250:$0.4700
    • 100:$0.5150
    • 50:$0.5980
    • 25:$0.6790
    • 1:$0.8500
    SI2315BDS-T1-E3
    DISTI # 06J7577
    Vishay IntertechnologiesP CHANNEL MOSFET, -12V, -3A, TO-236,Transistor Polarity:P Channel,Continuous Drain Current Id:-3A,Drain Source Voltage Vds:-12V,On Resistance Rds(on):0.04ohm,Rds(on) Test Voltage Vgs:-4.5V,Threshold Voltage Vgs:-900mV RoHS Compliant: Yes1105
    • 1:$0.1890
    • 25:$0.1890
    • 50:$0.1890
    • 100:$0.1890
    • 250:$0.1890
    • 500:$0.1890
    • 1000:$0.1890
    SI2315BDS-T1-E3.
    DISTI # 28AC2126
    Vishay IntertechnologiesFOR NEW DESIGNS USE SI2333CDS-T1-GE3 ROHS COMPLIANT: NO6000
    • 30000:$0.1400
    • 18000:$0.1440
    • 12000:$0.1480
    • 6000:$0.1540
    • 1:$0.1590
    SI2315BDS-T1-E3
    DISTI # 70026068
    Vishay SiliconixMOSFET,Power,P-Channel,-12 V,8 V,3.5 A,1.25 W,-55 to 150 degC
    RoHS: Compliant
    0
    • 3000:$0.3930
    • 6000:$0.3590
    • 12000:$0.3480
    SI2315BDS-T1-E3
    DISTI # 781-SI2315BDS-E3
    Vishay IntertechnologiesMOSFET 1.8V 3.2A 1.25W
    RoHS: Compliant
    9252
    • 1:$0.6700
    • 10:$0.5420
    • 100:$0.4110
    • 500:$0.3400
    • 1000:$0.2720
    • 3000:$0.2460
    • 6000:$0.2290
    • 9000:$0.2210
    SI2315BDS-T1
    DISTI # 781-SI2315BDS
    Vishay IntertechnologiesMOSFET RECOMMENDED ALT 781-SI2333CDS-T1-GE3
    RoHS: Not compliant
    0
      SI2315BDS-T1-E3Vishay Intertechnologies 
      RoHS: Compliant
      2460Cut Tape/Mini-Reel
      • 1:$0.2700
      • 100:$0.1960
      • 250:$0.1840
      • 500:$0.1750
      • 1500:$0.1620
      SI2315BDS-T1-E3Vishay IntertechnologiesSingle P-Channel 12 V 0.05 Ohms Surface Mount Power Mosfet - SOT-23
      RoHS: Compliant
      66000Reel
      • 3000:$0.1460
      • 6000:$0.1380
      SI2315BDS-T1-E3Vishay Intertechnologies 2713
        SI2315BDS-T1-E3Vishay Siliconix 620
        • 9:$0.5625
        • 37:$0.3656
        • 138:$0.2109
        • 476:$0.1800
        SI2315BDS-T1-E3Vishay Siliconix 1438
          SI2315BDS-T1-E3Vishay SemiconductorsSMALL SIGNAL FIELD-EFFECT TRANSISTOR, 3A I(D), 12V, 1-ELEMENT, P-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-236AB496
          • 161:$0.2250
          • 34:$0.3750
          • 1:$0.7500
          SI2315BDS-T1-E3Vishay IntertechnologiesSMALL SIGNAL FIELD-EFFECT TRANSISTOR, 3A I(D), 12V, 1-ELEMENT, P-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-236AB2184
          • 506:$0.3168
          • 127:$0.3960
          • 1:$0.7920
          SI2315BDS-T1-E3
          DISTI # SI2315BDS-T1-E3
          Vishay IntertechnologiesTransistor: P-MOSFET,unipolar,-12V,-3A,1.19W,SOT232261
          • 3000:$0.1916
          • 500:$0.2209
          • 100:$0.2548
          • 25:$0.2818
          • 3:$0.2987
          SI2315BDST1E3Vishay IntertechnologiesSmall Signal Field-Effect Transistor, 3A I(D), 12V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB
          RoHS: Compliant
          18000
            SI2315BDS-T1-E3Vishay IntertechnologiesMOSFET 1.8V 3.2A 1.25W
            RoHS: Compliant
            Americas -
            • 3000:$0.2320
            • 6000:$0.2200
            • 12000:$0.2130
            • 18000:$0.2080
            SI2315BDS-T1-E3
            DISTI # 1470105
            Vishay IntertechnologiesMOSFET, P, -12V, -3.85A, SOT-23
            RoHS: Compliant
            1105
            • 500:£0.1890
            • 250:£0.2010
            • 100:£0.2210
            • 25:£0.3220
            • 1:£0.3480
            SI2315BDS-T1-E3
            DISTI # 1470105
            Vishay IntertechnologiesMOSFET, P, -12V, -3.85A, SOT-23
            RoHS: Compliant
            1105
            • 500:$0.3310
            • 100:$0.4210
            • 10:$0.5640
            • 1:$0.6600
            SI2315BDS-T1-E3
            DISTI # 1470105RL
            Vishay IntertechnologiesMOSFET, P, -12V, -3.85A, SOT-23
            RoHS: Compliant
            0
            • 500:$0.3310
            • 100:$0.4210
            • 10:$0.5640
            • 1:$0.6600
            SI2315BDS-T1-E3
            DISTI # XSKDRABV0043834
            Vishay IntertechnologiesSO-16
            RoHS: Compliant
            2400 in Stock0 on Order
            • 2400:$0.2557
            SI2315BDS-T1-E3
            DISTI # XSFP00000106261
            Vishay SiliconixGeneral Purpose Inductor, 47uH, 10%,1Element,Ferrite-Core, SMD, 1206
            RoHS: Compliant
            55329 in Stock0 on Order
            • 55329:$0.1947
            • 3000:$0.2086
            Bild Teil # Beschreibung
            ES2B-13-F

            Mfr.#: ES2B-13-F

            OMO.#: OMO-ES2B-13-F

            Rectifiers 100V 2A
            HUF76609D3ST

            Mfr.#: HUF76609D3ST

            OMO.#: OMO-HUF76609D3ST

            MOSFET 10a 100V 0.165 Ohm 1Ch HS Logic Gate
            TS12A4514DBVR

            Mfr.#: TS12A4514DBVR

            OMO.#: OMO-TS12A4514DBVR

            Analog Switch ICs Lo-Vltg,Lo On-State Res SPST CMOS Ana Sw
            RC0402FR-07100KL

            Mfr.#: RC0402FR-07100KL

            OMO.#: OMO-RC0402FR-07100KL

            Thick Film Resistors - SMD 100K OHM 1%
            100SXE15M

            Mfr.#: 100SXE15M

            OMO.#: OMO-100SXE15M

            Aluminum Organic Polymer Capacitors 100VDC 15uF 40mOhm 8x12mm OS-CON
            TS12A4514DBVR

            Mfr.#: TS12A4514DBVR

            OMO.#: OMO-TS12A4514DBVR-TEXAS-INSTRUMENTS

            Analog Switch ICs Lo-Vltg,Lo On-State Res SPST CMOS Ana Sw
            HUF76609D3ST

            Mfr.#: HUF76609D3ST

            OMO.#: OMO-HUF76609D3ST-ON-SEMICONDUCTOR

            MOSFET N-CH 100V 10A DPAK
            100SXE15M

            Mfr.#: 100SXE15M

            OMO.#: OMO-100SXE15M-PANASONIC

            Cap Aluminum Polymer 15uF 100VDC 20% (8 X 12mm) Radial 3.5mm 0.04 Ohm 2350mA 5000h 105C
            5520425-3

            Mfr.#: 5520425-3

            OMO.#: OMO-5520425-3-TE-CONNECTIVITY

            Modular Connectors / Ethernet Connectors 6 PCB TOP ENTRY
            ES2B-13-F

            Mfr.#: ES2B-13-F

            OMO.#: OMO-ES2B-13-F-DIODES

            DIODE GEN PURP 100V 2A SMB
            Verfügbarkeit
            Aktie:
            Available
            Auf Bestellung:
            1992
            Menge eingeben:
            Der aktuelle Preis von SI2315BDS-T1-E3 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
            Referenzpreis (USD)
            Menge
            Stückpreis
            ext. Preis
            1
            0,67 $
            0,67 $
            10
            0,54 $
            5,42 $
            100
            0,41 $
            41,10 $
            500
            0,34 $
            170,00 $
            1000
            0,27 $
            272,00 $
            Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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