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| PartNumber | SI2315BDS-T1-E3 | SI2315BDS-T1-GE3 |
| Description | MOSFET 1.8V 3.2A 1.25W | MOSFET 12V 3.85A 1.19W 50mohm @ 4.5V |
| Manufacturer | Vishay | Vishay |
| Product Category | MOSFET | MOSFET |
| RoHS | Y | Y |
| Technology | Si | Si |
| Mounting Style | SMD/SMT | - |
| Package / Case | SOT-23-3 | - |
| Number of Channels | 1 Channel | - |
| Transistor Polarity | P-Channel | - |
| Vds Drain Source Breakdown Voltage | 12 V | - |
| Id Continuous Drain Current | 3 A | - |
| Rds On Drain Source Resistance | 50 mOhms | - |
| Vgs th Gate Source Threshold Voltage | 450 mV | - |
| Vgs Gate Source Voltage | 4.5 V | - |
| Qg Gate Charge | 8 nC | - |
| Minimum Operating Temperature | - 55 C | - |
| Maximum Operating Temperature | + 150 C | - |
| Pd Power Dissipation | 0.75 W | - |
| Configuration | Single | - |
| Channel Mode | Enhancement | - |
| Tradename | TrenchFET | TrenchFET |
| Packaging | Reel | Reel |
| Series | SI2 | SI2 |
| Transistor Type | 1 P-Channel | - |
| Brand | Vishay / Siliconix | Vishay / Siliconix |
| Forward Transconductance Min | 7 S | - |
| Fall Time | 50 ns | - |
| Product Type | MOSFET | MOSFET |
| Rise Time | 35 ns | - |
| Factory Pack Quantity | 3000 | 3000 |
| Subcategory | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 50 ns | - |
| Typical Turn On Delay Time | 15 ns | - |
| Part # Aliases | SI2315BDS-E3 | SI2315BDS-GE3 |
| Unit Weight | 0.000282 oz | 0.000282 oz |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
Vishay / Siliconix |
SI2315BDS-T1-E3 | MOSFET 1.8V 3.2A 1.25W | |
| SI2315BDS-T1-GE3 | MOSFET 12V 3.85A 1.19W 50mohm @ 4.5V | ||
Vishay |
SI2315BDS-T1-E3 | MOSFET P-CH 12V 3A SOT23-3 | |
| SI2315BDS-T1-GE3 | MOSFET P-CH 12V 3A SOT23-3 | ||
| SI2315BDST1 | Small Signal Field-Effect Transistor, 3A I(D), 12V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB | ||
| SI2315BDS-T1-E3-CUT TAPE | Neu und Original |